Invention Grant
- Patent Title: Defect detection of a semiconductor specimen
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Application No.: US17748996Application Date: 2022-05-19
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Publication No.: US12223641B2Publication Date: 2025-02-11
- Inventor: Boaz Dudovich , Assaf Ariel , Amir Bar , Lior Yehieli , Chen Itzikowitz , Shiran Ben Israel , Lior Katz , Eli Oren Joni , Eyal Rot
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T3/10 ; G06T7/00 ; H04N7/01

Abstract:
There is provided a system and method of defect detection of a semiconductor specimen. The method includes obtaining a first image of the specimen acquired at a first bit depth, converting by a first processor the first image to a second image with a second bit depth lower than the first bit depth, transmitting the second image to a second processor configured to perform first defect detection on the second image using a first defect detection algorithm to obtain a first set of defect candidates, and sending locations of the first set of defect candidates to the first processor, extracting, from the first image, a set of image patches corresponding to the first set of defect candidates based on the locations, and performing second defect detection on the set of image patches using a second defect detection algorithm to obtain a second set of defect candidates.
Public/Granted literature
- US20230377125A1 DEFECT DETECTION OF A SEMICONDUCTOR SPECIMEN Public/Granted day:2023-11-23
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