公开(公告)号：US12223641B2

公开(公告)日：2025-02-11

申请号：US17748996

申请日：2022-05-19

Applicant: Applied Materials Israel Ltd.

Inventor： Boaz Dudovich ,  Assaf Ariel ,  Amir Bar ,  Lior Yehieli ,  Chen Itzikowitz ,  Shiran Ben Israel ,  Lior Katz ,  Eli Oren Joni ,  Eyal Rot

IPC: G06K9/00 ,  G06T3/10 ,  G06T7/00 ,  H04N7/01

Abstract: There is provided a system and method of defect detection of a semiconductor specimen. The method includes obtaining a first image of the specimen acquired at a first bit depth, converting by a first processor the first image to a second image with a second bit depth lower than the first bit depth, transmitting the second image to a second processor configured to perform first defect detection on the second image using a first defect detection algorithm to obtain a first set of defect candidates, and sending locations of the first set of defect candidates to the first processor, extracting, from the first image, a set of image patches corresponding to the first set of defect candidates based on the locations, and performing second defect detection on the set of image patches using a second defect detection algorithm to obtain a second set of defect candidates.