Invention Grant
- Patent Title: Plating apparatus and method for electroplating wafer
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Application No.: US17872366Application Date: 2022-07-25
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Publication No.: US12227865B2Publication Date: 2025-02-18
- Inventor: Che-Min Lin , Hung-San Lu , Chao-Lung Chen , Chao Yuan Chang , Chun-An Kung , Chin-Hsin Hsiao , Wen-Chun Hou , Szu-Hung Yang , Ping-Ching Jiang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: C25D17/00
- IPC: C25D17/00 ; C25D7/12 ; H01L21/288

Abstract:
A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.
Public/Granted literature
- US20220356594A1 PLATING APPARATUS AND METHOD FOR ELECTROPLATING WAFER Public/Granted day:2022-11-10
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