Invention Grant
- Patent Title: Display device including Ga doped indium tin oxide (ITO) based emission layer and manufacturing method thereof
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Application No.: US17720063Application Date: 2022-04-13
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Publication No.: US12230735B2Publication Date: 2025-02-18
- Inventor: Hyun Eok Shin , Ju Hyun Lee , Sung Joo Kwon , Hyun Ah Sung , Dong Min Lee
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-Si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-Si
- Agency: Innovation Counsel LLP
- Priority: KR10-2021-0097737 20210726
- Main IPC: H01L33/16
- IPC: H01L33/16 ; H01L33/00 ; H01L33/62

Abstract:
Provided is a display device comprising a substrate; a plurality of transistors disposed on the substrate; a first pixel electrode, a second pixel electrode, and a third pixel electrode respectively connected to the transistors; a first emission layer disposed to overlap the first pixel electrode, a second emission layer disposed to overlap the second pixel electrode, and a third emission layer disposed to overlap the third pixel electrode; and a common electrode disposed on the first emission layer, the second emission layer, and the third emission layer, wherein the first pixel electrode includes a first layer, and a second layer disposed on the first layer and including a Ga-doped ITO.
Public/Granted literature
- US20230024131A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2023-01-26
Information query
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