Display device including Ga doped indium tin oxide (ITO) based emission layer and manufacturing method thereof
Abstract:
Provided is a display device comprising a substrate; a plurality of transistors disposed on the substrate; a first pixel electrode, a second pixel electrode, and a third pixel electrode respectively connected to the transistors; a first emission layer disposed to overlap the first pixel electrode, a second emission layer disposed to overlap the second pixel electrode, and a third emission layer disposed to overlap the third pixel electrode; and a common electrode disposed on the first emission layer, the second emission layer, and the third emission layer, wherein the first pixel electrode includes a first layer, and a second layer disposed on the first layer and including a Ga-doped ITO.
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