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公开(公告)号：US11730033B2
公开(公告)日：2023-08-15
申请号：US17331527
申请日：2021-05-26
发明人： Gyung Min Baek , Hyun Eok Shin , Ju Hyun Lee , Hong Sick Park
IPC分类号： H10K59/131 , H10K59/126 , H10K59/38 , H10K71/00 , H10K59/12 , H10K59/123
CPC分类号： H10K59/1315 , H10K59/126 , H10K59/38 , H10K71/00 , H10K59/1201
摘要： A display device includes: a substrate; a data line on the substrate; a first insulating layer on the data line; a first transistor on the first insulating layer; a second insulating layer on the first transistor; a pixel electrode on the second insulating layer, the pixel electrode being electrically connected to the first transistor; and an auxiliary data pattern on the second insulating layer as a same layer as the pixel electrode, the auxiliary data pattern being electrically connected to the data line.
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公开(公告)号：US11099441B2
公开(公告)日：2021-08-24
申请号：US16460829
申请日：2019-07-02
发明人： Chan Woo Yang , Hong Sick Park , Hyun Eok Shin , Joon Yong Park , Gyung Min Baek , Sang Won Shin , Ju Hyun Lee
IPC分类号： H01L29/49 , G02F1/1362 , H01L27/12 , G02F1/1335 , H01L21/285 , G02F1/1368 , H01L21/3213
摘要： A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive layer and a metal oxide layer stacked on the conductive layer, wherein the metal oxide layer comprises molybdenum (Mo), tantalum (Ta), and oxygen (O). The conductive layer includes a first metal layer on the first base, and a second metal layer between the first metal layer and the metal oxide layer. The second metal layer has a higher electrical conductivity than the first metal layer, and a thickness of the second metal layer is greater than a thickness of the first metal layer.
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公开(公告)号：US11495624B2
公开(公告)日：2022-11-08
申请号：US17144210
申请日：2021-01-08
发明人： Ju Hyun Lee , Gyung Min Baek , Do Keun Song , Hyun Eok Shin
摘要： A display device includes: a substrate including a first display area and a second display area; an optical element which overlaps the second display area; a semiconductor layer disposed on the substrate; a first insulation layer disposed to cover the semiconductor layer; a gate conductor disposed on the first insulation layer; a second insulation layer disposed to cover the gate conductor; a data conductor disposed on the second insulation layer; a third insulation layer disposed to cover the data conductor; and a pixel electrode disposed on the data conductor. The data conductor disposed in the first display area includes an opaque conductor, and a part of the data conductor disposed in the second display area is a transparent conductor.
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4.发明授权公开(公告)号：US10386687B2
公开(公告)日：2019-08-20
申请号：US15906991
申请日：2018-02-27
发明人： Chan Woo Yang , Hong Sick Park , Hyun Eok Shin , Joon Yong Park , Gyung Min Baek , Sang Won Shin , Ju Hyun Lee
IPC分类号： H01L27/12 , H01L29/49 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/285 , H01L21/3213
摘要： A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoxTayOz, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.
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5.发明授权公开(公告)号：US12041818B2
公开(公告)日：2024-07-16
申请号：US17400158
申请日：2021-08-12
发明人： Ju Hyun Lee , Gyung Min Baek , Hyun Eok Shin , Sung Joo Kwon
IPC分类号： H10K50/86 , H10K59/122
CPC分类号： H10K50/865 , H10K59/122
摘要： A display devise is provided. A display device includes a substrate, a lower metal pattern disposed on one surface of the substrate, a buffer layer disposed on the one surface of the substrate to cover the lower metal pattern, a semiconductor layer disposed on the buffer layer, a gate insulating film disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating film, wherein the lower metal pattern includes an antireflection layer disposed on the one surface of the substrate and a conductive metal layer disposed on one surface of the antireflection layer, and the antireflection layer includes molybdenum oxide (MoOx) and at least one of zinc oxide (ZnOx) and indium oxide (InOx).
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公开(公告)号：US11837468B2
公开(公告)日：2023-12-05
申请号：US17469279
申请日：2021-09-08
发明人： Mann Ho Cho , Kwang Sik Jeong , Hyeon Sik Kim , Hyun Eok Shin , Byung Soo So , Ju Hyun Lee
IPC分类号： H01L21/02
CPC分类号： H01L21/02491 , H01L21/0254 , H01L21/02422 , H01L21/02502
摘要： A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.
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公开(公告)号：US11424312B2
公开(公告)日：2022-08-23
申请号：US16872594
申请日：2020-05-12
发明人： Gyung Min Baek , Ju Hyun Lee , Jae Uoon Kim , Hong Sick Park , Hyun Eok Shin
摘要： A device includes a substrate including a display area and a pad area; a first conductive layer on the substrate; and a first insulating film on the first conductive layer, the first insulating film having a first contact hole in the display area to expose the first conductive layer and a pad opening exposing the first conductive layer in the pad area, the first conductive layer being arranged such that in a first region covered by the first insulating film, a second conductive capping layer of the first conductive layer is entirely on a first conductive capping layer of the first conductive layer; in a second region overlapping the contact hole, the second conductive capping layer is entirely on the first conductive capping layer; and in a third region exposed by the pad opening, the second conductive capping layer exposes at least a portion of the first conductive capping layer.
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公开(公告)号：US20220013615A1
公开(公告)日：2022-01-13
申请号：US17178288
申请日：2021-02-18
发明人： Gyung Min Baek , Hyun Eok Shin , Ju Hyun Lee
摘要： A display device and a method of fabricating a display device are provided. A display device includes a substrate. The wiring layer includes a conductive metal layer and a metal compound layer of the conductive metal layer, The metal compound layer surrounds the conductive metal layer.
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公开(公告)号：US11112665B2
公开(公告)日：2021-09-07
申请号：US16276529
申请日：2019-02-14
发明人： Ju Hyun Lee , Gyung Min Baek , Hyun Eok Shin , Hong Sick Park , Sang Won Shin
IPC分类号： H01L27/14 , G02F1/1362 , H01L27/12
摘要： A display device may include a first base, a metal oxide layer overlapping a face of the first base, and a conductive metal layer directly contacting the metal oxide layer. The metal oxide layer may include molybdenum oxide. A side of the metal oxide layer may be oriented at a first angle relative to the face of the first base. A side of the conductive metal layer may be oriented at a second angle relative to the face of the first base. A size of the second angle may be in a range of 30° to 75°.
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10.发明申请公开(公告)号：US20190086754A1
公开(公告)日：2019-03-21
申请号：US15906991
申请日：2018-02-27
发明人： Chan Woo Yang , Hong Sick Park , Hyun Eok Shin , Joon Yong Park , Gyung Min Baek , Sang Won Shin , Ju Hyun Lee
IPC分类号： G02F1/1362 , H01L27/12 , G02F1/1335 , H01L21/3213 , H01L21/285 , G02F1/1368
CPC分类号： G02F1/136286 , G02F1/133553 , G02F1/136209 , G02F1/1368 , G02F2001/136295 , G02F2201/12 , G02F2201/40 , H01L21/2855 , H01L21/32134 , H01L21/32139 , H01L27/1218 , H01L27/124 , H01L27/1262 , H01L29/4908 , H01L29/4958
摘要： A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoxTayOz, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.
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