- Patent Title: Surface treatment method, method for producing semiconductor substrate including the surface treatment method, composition for surface treatment, and system for producing semiconductor substrate including the composition for surface treatment
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Application No.: US17881283Application Date: 2022-08-04
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Publication No.: US12249513B2Publication Date: 2025-03-11
- Inventor: Tsutomu Yoshino , Yasuto Ishida
- Applicant: Fujimi Incorporated
- Applicant Address: JP Kiyosu
- Assignee: Fujimi Incorporated
- Current Assignee: Fujimi Incorporated
- Current Assignee Address: JP Kiyosu
- Agency: FOLEY & LARDNER LLP
- Priority: JP2021-129176 20210805,JP2022-078426 20220511
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/02
Abstract:
The present invention provides a means capable of sufficiently removing a residue containing inorganic oxide abrasive grains present on the surface of a polished object to be polished containing silicon nitride. One aspect of the present invention relates to a surface treatment method for reducing a residue containing inorganic oxide abrasive grains on a surface of a polished object to be polished containing silicon nitride using a composition for surface treatment, wherein the composition for surface treatment contains a zeta potential adjusting agent having a negatively charged functional group and having a viscosity of an aqueous solution having a concentration of 20% by mass at 25° C. of 10 mPa·s or more and a dispersing medium, and the surface treatment method includes controlling a zeta potential of the silicon nitride and a zeta potential of the inorganic oxide abrasive grains each to −30 mV or less using the composition for surface treatment.
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