Control logic in a memory device causes a programming pulse of a set of programming pulses to be applied to a wordline associated with a memory cell of a memory device, where the memory cell is to be programmed to a target voltage level representing a first programming level. At a first time, first data is caused to be stored in a cache, the first data indicating that a threshold voltage of a memory cell exceeds the target voltage level. At a second time, the cache is caused to be refreshed to store second data indicating that the threshold voltage of the memory cell is less than the target voltage level. In view of the second data, a level shifting operation associated with the memory cell is caused to be executed.