Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing having the conductive portions isolated from each other by an insulating 2D material
-
Application No.: US17748111Application Date: 2022-05-19
-
Publication No.: US12255136B2Publication Date: 2025-03-18
- Inventor: Cheng-Hsien Lu , Yun-Yuan Wang , Ming-Hsiu Lee , Dai-Ying Lee
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/532
Abstract:
A semiconductor structure is provided. The semiconductor structure includes a substrate and a via structure. The via structure is through the substrate. The via structure includes a first conductive portion, a second conductive portion, a first barrier portion, a second barrier portion, and a third barrier portion. The first conductive portion has a ring-shaped cross section. The second conductive portion is disposed at an inner side of the first conductive portion. The second conductive portion has a ring-shaped cross section. The first barrier portion is disposed at an outer side of the first conductive portion. The second barrier portion is disposed between the first conductive portion and the second conductive portion. The third barrier portion is disposed at an inner side of the second conductive portion. At least one of the first barrier portion, the second barrier portion, or the third barrier portion includes an insulating 2D material.
Public/Granted literature
- US20230378053A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2023-11-23
Information query
IPC分类:
