Invention Grant
- Patent Title: Selective etch of a substrate
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Application No.: US17836562Application Date: 2022-06-09
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Publication No.: US12261049B2Publication Date: 2025-03-25
- Inventor: David Thompson , Bhaskar Jyoti Bhuyan , Mark Saly , Lisa Enman , Aaron Dangerfield , Jesus Candelario Mendoza , Jeffrey W. Anthis , Lakmal Kalutarage
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Lowenstein Sandler LLP
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/02 ; H01L21/027 ; H01L21/308 ; H01L21/311 ; H01L21/3213
Abstract:
Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.
Public/Granted literature
- US20230420259A1 SELECTIVE ETCH OF A SUBSTRATE Public/Granted day:2023-12-28
Information query
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