Invention Grant
- Patent Title: Semiconductor memory device and memory system
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Application No.: US18181488Application Date: 2023-03-09
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Publication No.: US12298826B2Publication Date: 2025-05-13
- Inventor: Akio Sugahara , Yasuhiro Hirashima , Naoya Tokiwa
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: G06F1/28
- IPC: G06F1/28 ; G11C16/04

Abstract:
According to an embodiment, a semiconductor memory device includes a first pin, a first receiving circuit, and a first terminating circuit. The first pin receives a first signal and a second signal having a smaller amplitude than the first signal. The first receiving circuit is connected to the first pin and outputs, based on a comparison between the first signal and a first voltage, a third signal. The first receiving circuit also outputs, based on a comparison between the second signal and a second voltage, a fourth signal having a smaller amplitude than the third signal. The first terminating circuit is connected to the first pin. The first terminating circuit is disabled if the first pin receives the first signal, and enabled if the first pin receives the second signal.
Public/Granted literature
- US20230213993A1 SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM Public/Granted day:2023-07-06
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