Invention Grant
- Patent Title: Integrated circuit and method of forming the same
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Application No.: US18760500Application Date: 2024-07-01
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Publication No.: US12302642B2Publication Date: 2025-05-13
- Inventor: Kuang-Ching Chang , Jung-Chan Yang , Hui-Zhong Zhuang , Chih-Liang Chen , Kuo-Nan Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F1/3287
- IPC: G06F1/3287 ; H10D89/10

Abstract:
An integrated circuit includes a first power rail on a back-side of a wafer and being configured to supply a first voltage, a header circuit coupled to the first power rail and being configured to supply the first voltage to the first power rail, a second and third power rail on the back-side of the wafer, a fourth power rail on a front-side of the wafer, and a fifth power rail on the back-side of the wafer. The second and third power rail being configured to supply a second voltage. The fourth power rail includes a first set of conductors configured to supply a third voltage to the header circuit. The fifth power rail is configured to supply the third voltage and is separated from the first power rail in a first and second direction, and is separated from the second and third power rail in the first direction.
Public/Granted literature
- US20240355806A1 INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME Public/Granted day:2024-10-24
Information query
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