- Patent Title: Inversion layer avalanche photodiode with vertical electric field
-
Application No.: US18054871Application Date: 2022-11-11
-
Publication No.: US12302649B2Publication Date: 2025-05-13
- Inventor: Gianlorenzo Masini
- Applicant: Cisco Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Cisco Technology, Inc.
- Current Assignee: Cisco Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patterson + Sheridan, LLP
- Main IPC: H10F30/225
- IPC: H10F30/225 ; H10F71/00 ; H10F77/122 ; H10F77/14 ; H10F77/40
Abstract:
Embodiments herein describe an APD with a vertical electric field. In one embodiment, to reduce the thickness of the vertical electric field, an inversion layer at the interface between N doped silicon and an oxide is used as a cathode for the vertical electric field.
Public/Granted literature
- US20240162366A1 INVERSION LAYER APD Public/Granted day:2024-05-16
Information query
