End-face coupling structures underneath a photonic layer

    公开(公告)号:US11906781B2

    公开(公告)日:2024-02-20

    申请号:US18064506

    申请日:2022-12-12

    CPC classification number: G02B6/136 G02B6/125

    Abstract: A method includes providing a photonic wafer that includes an electrical layer and a layer disposed on a substrate. The layer includes at least one optical waveguide that is disposed between the electrical layer and the substrate. The method also includes removing a portion of the substrate underneath the at least one optical waveguide and forming an end-face coupler. A portion of the end-face coupler is within the removed portion of the substrate. The end-face coupler transmits an optical signal to, or receives an optical signal from, an external optical device.

    End-face coupling structures underneath a photonic layer

    公开(公告)号:US11567262B2

    公开(公告)日:2023-01-31

    申请号:US17248579

    申请日:2021-01-29

    Abstract: A method includes providing a photonic wafer that includes an electrical layer and a layer disposed on a substrate. The layer includes at least one optical waveguide that is disposed between the electrical layer and the substrate. The method also includes removing a portion of the substrate underneath the at least one optical waveguide and forming an end-face coupler. A portion of the end-face coupler is within the removed portion of the substrate. The end-face coupler transmits an optical signal to, or receives an optical signal from, an external optical device.

    WAVEGUIDE INTEGRATED PHOTODIODE
    4.
    发明公开

    公开(公告)号:US20240361523A1

    公开(公告)日:2024-10-31

    申请号:US18140826

    申请日:2023-04-28

    Abstract: In part, in one aspect, the disclosure relates to a photodiode. The photodiode may include a substrate; a semiconductor layer comprising an semiconductor material, the semiconductor layer disposed on the substrate and in communication with at least a region of the substrate, the semiconductor layer having a first side, a second side, and an upper surface, the semiconductor layer having a height; a semiconductor structure partially disposed on the upper surface, the semiconductor structure comprising at least one elongate portion that extends beyond the first side and along a portion of the upper surface of the semiconductor layer; and a metal contact that is in electrical connection with the elongate portion of the semiconductor structure.

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