Throughput is increased, the footprint is reduced, heating may be carried out in a short time, and variations in the temperature of the substrate surface may be reduced. A heating chamber 47 for heating the substrate is formed as an upper level of a load/lock chamber 13, and a cooling chamber 48 for cooling the substrate is formed as a lower level of the load/lock chamber 13. An upper heater 51 and a lower heater 56 are formed above and below the heating chamber 47. A shower plate 52 is located between the upper heater 51 and the lower heater 56. A gas heating space 50 is located between the upper heater 51 and the shower plate 52. An N2 gas introducer 42 is connected to the gas heating space 50, such that N2 gas is introduced into the gas heating space 50. The N2 gas introduced from the N2 gas introducer 42 is heated in the gas heating space 50 and is then supplied to the substrate W in the form of a shower via the shower plate 52. The substrate W is subjected to convection heat transfer from the N2 gas that underwent radial heat transfer from the upper heater 51, as well as from the heated N2 gas, and is also heated by the lower heater 56.