Invention Application
US20010035706A1 Methods of forming electron emission devices 失效
形成电子发射装置的方法

  • Patent Title: Methods of forming electron emission devices
  • Patent Title (中): 形成电子发射装置的方法
  • Application No.: US09888125
    Application Date: 2001-06-22
  • Publication No.: US20010035706A1
    Publication Date: 2001-11-01
  • Inventor: Kanwal K. RainaAmmar Derraa
  • Main IPC: H01J001/304
  • IPC: H01J001/304 H01J009/02
Methods of forming electron emission devices
Abstract:
In one aspect, an electron emission device comprises a substrate, and a first layer supported by the substrate. The first layer comprises a conductive material. The electron emission display device further comprises an electron emission tip electrically connected with the first layer, and a second layer electrically disposed between the first layer and the electron emission tip. The second layer comprises microcrystalline silicon. In another aspect, the invention encompasses a method of forming an electron emission device. A substrate is provided, and a conductive layer is formed over the substrate. A microcrystalline-silicon-containing layer is formed over the conductive layer, and a resistor layer is formed over the microcrystalline-silicon-containing layer. An emitter tip is formed over the resistor layer. In yet other aspects, the invention encompasses field emission display devices, and methods of forming field emission display devices.
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