This invention relates to the field of materials of the photorefractive crystal. The composition of these crystals is Li1nullxNb1nullyO3: Fem, Mn, where M can be magnesium, indium, or zinc; when using q to denote the ion valence of M (qnull2 when M is Mg or Zn, and qnull3 when M is In), the values of x, y, m, and n are in the range of 0.05nullxnull0.13, 0.00nullynull0.01, 5.0null10null5nullmnull7.5null10null4, and 0.02nullqnnull0.13. This invention greatly improves the photorefractive properties of LiNbO3 crystals: makes it have a high diffraction efficiency (more than 68%), a fast response speed for photorefraction (an order of magnitude faster than iron doped LiNbO3), and a high resistance to optical scattering (the light intensity threshold to photorefractive fan scattering near two orders of magnitude larger than LiNbO3: Fe). This invention is an excellent three-dimensional optical storage material and has a vast potential market.