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    Optical member, process for producing the same, and projection aligner
    1.
    发明申请
    Optical member, process for producing the same, and projection aligner 审中-公开
    光学构件，其制造方法和投影对准器

    公开(公告)号：US20040005266A1

    公开(公告)日：2004-01-08

    申请号：US10398798

    申请日：2003-04-10

    发明人： Shigeru Sakuma ,  Kuninori Shinada

    IPC分类号： C01B033/26

    CPC分类号： C30B33/00 ,  C30B29/12 ,  G02B1/02 ,  G02B17/08 ,  G02B17/0892 ,  G03F1/60 ,  G03F7/70958 ,  G03F7/70966

    摘要： The optical member of the present invention is an optical member comprising a fluoride crystal; and having an optical axis forming an angle of 10null to 36null with a axis of the fluoride crystal, and a birefringence of 2.0 nm/cm or less in the optical axis direction. The optical member of the present invention can improve the yield and processing accuracy in the process of making the optical member, and can achieve sufficiently high optical characteristics.

    摘要翻译： 本发明的光学构件是包含氟化物晶体的光学构件; 并且具有与氟化物晶体的<111>轴成10°至36°的角度的光轴，并且在光轴方向上的双折射率为2.0nm / cm以下。 本发明的光学构件可以提高制造光学构件的过程中的产量和加工精度，并且可以实现足够高的光学特性。

    Novel inorganic polymer based on aluminium and silicon
    3.
    发明申请
    Novel inorganic polymer based on aluminium and silicon 失效
    基于铝和硅的新型无机聚合物

    公开(公告)号：US20010046467A1

    公开(公告)日：2001-11-29

    申请号：US09886890

    申请日：2001-06-21

    发明人： Jeannine Rigola ,  Olivier J. Poncelet ,  Didier J. Martin

    IPC分类号： C01B033/26

    CPC分类号： C01B33/26

    摘要： An inorganic polymeric aluminosilicate material and a method for preparing the same, are disclosed. Instead of having a fibrous structure, the material has a structure consisting of spindles with a length in the range of from 10 to 100 nullm and a width in the range of from 2 to 20 nullm. This polymeric alumino-silicate can be used for the production of antistatic layers.

    摘要翻译： 公开了一种无机聚合物硅铝酸盐材料及其制备方法。 代替具有纤维结构，该材料具有由长度在10至100μm的长度和2至20μm范围内的宽度的心轴组成的结构。 该聚合铝硅酸盐可用于生产抗静电层。

    Single crystal silicon layer, its epitaxial growth method and semiconductor device
    4.
    发明申请
    Single crystal silicon layer, its epitaxial growth method and semiconductor device 失效
    单晶硅层，其外延生长方法和半导体器件

    公开(公告)号：US20010036434A1

    公开(公告)日：2001-11-01

    申请号：US09733500

    申请日：2000-12-08

    发明人： Hisayoshi Yamoto ,  Hideo Yamanaka

    IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14 ,  C01B033/26

    CPC分类号： C30B29/06 ,  C30B25/02

    摘要： In case of epitaxially growing a single crystal silicon layer by catalytic CVD on a material layer in lattice alignment with single crystal silicon, i.e. a substrate of single crystal silicon, sapphire, spinel, or the like, the total pressure of the growth atmosphere is maintained in the range from 1.33null10null3 Pa to 4 Pa at least in the initial period of the epitaxial growth, or alternatively, partial pressure of oxygen and moisture in the growth atmosphere is maintained in the range from 6.65null10null10 to 2null10null6 Pa at least in the initial period of the epitaxial growth. Thus, the maximum oxygen concentration of the epitaxially grown single crystal silicon layer becomes not higher than 3null1018 atoms/cmnull3 at least in a portion with the thickness of 10 nm from the boundary with the substrate 4. It is thus ensured to epitaxially grow a high-quality single crystal silicon layer at a lower temperature than that of existing CVD.

    摘要翻译： 在通过催化CVD将单晶硅层外延生长在与单晶硅（即，单晶硅，蓝宝石，尖晶石等）的基板进行晶格取向的材料层的情况下，保持生长气氛的总压力 至少在外延生长的初始阶段在1.33×10 -3 Pa至4Pa的范围内，或者，生长气氛中的氧气和水分的分压维持在6.65×10 -10至2×10 -6 Pa至少在外延生长的初始阶段。 因此，外延生长的单晶硅层的最大氧浓度至少在距离衬底4的边界厚度为10nm的部分中不高于3×1018个原子/ cm -3。因此，确保外延生长 在比现有CVD低的温度下的高品质单晶硅层。

    Silica-rich carrier, catalyser for heterogeneous reactions and method for the production thereof
    6.
    发明申请
    Silica-rich carrier, catalyser for heterogeneous reactions and method for the production thereof 失效
    富含二氧化硅的载体，用于多相反应的催化剂及其制备方法

    公开(公告)号：US20030082088A1

    公开(公告)日：2003-05-01

    申请号：US10169185

    申请日：2002-06-27

    发明人： Viktor Vladimirovich Barelko ,  Bair Sydypovich Balzhinimaev ,  Sergei Petrovich Kildyashev ,  Mikhail Grigorievich Makarenko ,  Anatoly Nikolaevich Parfenov ,  Ljudmila Grigorievna Simonova ,  Alexandr Viktorovich Toktarev

    IPC分类号： C01B033/26

    CPC分类号： B01J21/08 ,  B01J23/40 ,  B01J23/58 ,  B01J35/002 ,  B01J35/06 ,  B01J35/1009 ,  B01J35/1014 ,  B01J35/1019 ,  B01J37/0201 ,  B01J37/0205

    摘要： A silica-rich support is developed, which is used for preparing catalysts and may be employed in other fields of engineering: for producing fiber optic materials, in the manufacture of filters, etc. The support has a specific structure characterized by a set of claimed physicochemical properties: in the 29Si MAS NMR spectrum the state of silicon is characterized by the presence of lines with chemical shiftsnull100null3 ppm (line Q3) and null110null3 ppm (line Q4), with the ratio of the integral intensities of the lines Q3/Q4 of from 0.7 to 1.2 (FIG. 1); in the IR spectrum there is an absorption band of hydroxyl groups with the wave number 3620-3650 cmnull1 and half-width 65-75 cmnull1 (FIG. 2); the carrier has a specific surface area, as measured by the BET techniques from the thermal desorption of argon, SArnull0.5-30 m2/g and the surface, as measured by alkali titration techniques, SNanull10-250 m2/g, with SNa/SArnull5-30. A catalytic component is incorporated into the bulk of the support with a specific structure, this leading to the providing of highly active catalysts, resistant to sintering and to the effect of contact poisons. The conditions for the incorporation of the catalytic component are: an elevated temperatures and elevated pressures.

    摘要翻译： 开发了一种富含二氧化硅的载体，用于制备催化剂，并可用于其他工程领域：用于制造光纤材料，制造过滤器等。支持体具有一特定结构， 物理化学性质：在29Si MAS NMR谱中，硅的状态的特征在于存在具有化学位移的线--100±3ppm（线Q3）和-110±3ppm（线Q4），其中积分强度 的线Q3 / Q4为0.7〜1.2（图1）。 在IR光谱中，具有波数为3620-3650cm-1和半宽度为65-75cm-1的羟基的吸收带（图2）。 载体具有通过BET技术测量的比表面积，其通过氩气的热解吸，SAr = 0.5-30m 2 / g，通过碱滴定技术测得的表面积，SNa = 10-250m2 / g，与 SNa / SAr = 5-30。 催化组分以特定的结构结合到载体的大部分中，这导致提供高度活性的催化剂，耐烧结和接触毒物的作用。 引入催化组分的条件是：升高的温度和升高的压力。

    Process for the manufacture of dispersible alumino-silicates
    8.
    发明申请
    Process for the manufacture of dispersible alumino-silicates 失效
    制造可分散铝硅酸盐的方法

    公开(公告)号：US20020098142A1

    公开(公告)日：2002-07-25

    申请号：US10054830

    申请日：2002-01-23

    发明人： Andrea Brasch ,  Klaus Diblitz ,  Arnold Meyer

    IPC分类号： C01B033/26

    CPC分类号： C01B33/26 ,  B01J21/12

    摘要： Process for the manufacture of high-purity alumino-silicates which are dispersible in aqueous and/or aqueous-acidic media by hydrolysis of aluminum compounds and organosilicon compounds

    摘要翻译： 通过铝化合物和有机硅化合物的水解可分散在水和/或酸性水介质中的高纯度硅铝酸盐的方法