Invention Application
US20020054504A1 Nonvolatile memory device, having parts with different access time, reliablity, and capacity
失效
非易失性存储器件,具有不同访问时间,可靠性和容量的部件
- Patent Title: Nonvolatile memory device, having parts with different access time, reliablity, and capacity
- Patent Title (中): 非易失性存储器件,具有不同访问时间,可靠性和容量的部件
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Application No.: US09957628Application Date: 2001-09-19
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Publication No.: US20020054504A1Publication Date: 2002-05-09
- Inventor: Rino Micheloni , Giovanni Campardo
- Applicant: STMicroelectronics S.r.I.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.I.
- Current Assignee: STMicroelectronics S.r.I.
- Current Assignee Address: IT Agrate Brianza
- Priority: EP00830627.6 20000920
- Main IPC: G11C016/04
- IPC: G11C016/04

Abstract:
The multilevel memory device has a memory section containing cells that can be programmed with a predetermined number of levels greater than two, i.e., a multilevel array, and a memory section containing cells that can be programmed with two levels, i.e., a bilevel array. The multilevel array is used for storing high-density data, for which speed of reading is not essential, for example for storing the operation code of the system including the memory device. On the other hand, the bilevel array is used for storing data for which high speed and reliability of reading is essential, such as the BIOS of personal computers, and the data to be stored in a cache memory. The circuitry parts dedicated to programming, writing of test instructions, and all the functions necessary for the operation of the memory device, can be common to both arrays.
Public/Granted literature
- US06493260B2 Nonvolatile memory device, having parts with different access time, reliability, and capacity Public/Granted day:2002-12-10
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