发明申请
- 专利标题： High frequency semiconductor device
- 专利标题（中）： 高频半导体器件
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申请号： US10090614申请日： 2002-03-06
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公开(公告)号： US20020139993A1公开(公告)日： 2002-10-03
- 发明人: Yoshio Aoki , Yutaka Mimino , Osamu Baba , Muneharu Gotoh
- 申请人： Fujitsu Quantum Devices Limited
- 申请人地址： JP Nakakoma-gun
- 专利权人： Fujitsu Quantum Devices Limited
- 当前专利权人： Fujitsu Quantum Devices Limited
- 当前专利权人地址： JP Nakakoma-gun
- 优先权： JP2001-99962 20010330
- 主分类号： H01L031/072
- IPC分类号： H01L031/072 ; H01L031/109 ; H01Q001/48
摘要：
In a high frequency semiconductor device, a shield plate which is connected to the ground potential is provided above an MMIC structure including line conductors, with an insulating interlayer provided therebetween. By using the shield plate to shield the MMIC, interference caused by external electromagnetic waves or leakage of electromagnetic waves to the exterior can be reduced in a chip alone.
公开/授权文献
- US06712284B2 High frequency semiconductor device 公开/授权日：2004-03-30
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