Invention Application
US20020157059A1 Multipurpose method for constructing an error-control code for multilevel memory cells operating with a variable number of storage levels, and multipurpose error-control method using said error-control code 失效
用于构建以可变数量的存储级别操作的多级存储器单元的错误控制代码的多用途方法,以及使用所述错误控制代码的多用途错误控制方法

  • Patent Title: Multipurpose method for constructing an error-control code for multilevel memory cells operating with a variable number of storage levels, and multipurpose error-control method using said error-control code
  • Patent Title (中): 用于构建以可变数量的存储级别操作的多级存储器单元的错误控制代码的多用途方法,以及使用所述错误控制代码的多用途错误控制方法
  • Application No.: US10015949
    Application Date: 2001-11-02
  • Publication No.: US20020157059A1
    Publication Date: 2002-10-24
  • Inventor: Stefano GregoriPietro FerrariGuido Torelli
  • Applicant: STMicroelectronics S.r.l.
  • Applicant Address: IT Agrate Brianza
  • Assignee: STMicroelectronics S.r.l.
  • Current Assignee: STMicroelectronics S.r.l.
  • Current Assignee Address: IT Agrate Brianza
  • Priority: ITTO2000A001049 20001107
  • Main IPC: H03M013/00
  • IPC: H03M013/00
Multipurpose method for constructing an error-control code for multilevel memory cells operating with a variable number of storage levels, and multipurpose error-control method using said error-control code
Abstract:
Described herein is a method for constructing a multipurpose error-control code for multilevel memory cells operating with a variable number of storage levels, in particular for memory cells the storage levels of which can assume the values of the set nullba1, baaa2, . . . , ba1a2. . . ahnull, with b, a1, . . . , ah positive integers; the error-control code encoding information words, formed by k q-ary symbols, i.e., belonging to an alphabet containing q different symbols, with qnullnullba1, ba1a2, . . . , ba1a2ahnull, in corresponding code words formed by n q-ary symbols, with qnullba1a2ah, and having an error-correction capacity t, each code word being generated through an operation of multiplication between the corresponding information word and a generating matrix. The construction method comprises the steps of: acquiring the values of k, t, ba1, ba1a2, . . . , ba1a2. . .ah, which constitute the design specifications of said error-control code; calculating, as a function of qnullba1, k and t, the minimum value of n such that the Hamming limit is satisfied; calculating the maximum values {circumflex over (n)} and {circumflex over (k)} respectively of n and k that satisfy the Hamming limit for qnullba1, t and ({circumflex over (n)}-{circumflex over (k)})null(n-k); determining, as a function of t, the generating matrix of the abbreviated error-control code (n-k) on the finite-element field GF(ba1); constructing binary polynomial representations of the finite-element fields GF(ba1) GF(ba1a2), . . . , GF(ba1a2. . . ah); identifying, using the aforesaid exponential representations, the elements of the finite-element field GF(ba1a2ah), which are isomorphic to the elements of the finite-element fields GF(ba1), GF(ba1a2), . . . , GF(ba1a2. . . ah-1); establishing biunique correspondences between the elements of the finite-element fields GF(ba1), GF(ba1a2), . . . , GF(ba1a2. . . ah1) and the elements of the finite-element field GF(ba1a2ah) that are isomorphic to them; and replacing each of the elements of said generating matrix with the corresponding isomorphic element of the finite-element field GF(ba1a2. . . ah), thus obtaining a multipurpose generating matrix defining, together with the aforesaid biunique correspondences, a multipurpose error-control code that can be used with memory cells the storage levels of which can assume the values of the set nullba1, ba1a2, . . . , ba1a2. . . ahnullnull.
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