Invention Application
- Patent Title: Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same
- Patent Title (中): 电流垂直于平面结构的磁阻元件及其制造方法
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Application No.: US10027651Application Date: 2001-12-20
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Publication No.: US20020163766A1Publication Date: 2002-11-07
- Inventor: Shin Eguchi , Chikayoshi Kamata , Junya Ikeda , Atsushi Tanaka
- Applicant: FUJITSU LIMITED
- Applicant Address: null
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: null
- Priority: JP2001-134973 20010502
- Main IPC: G11B005/39
- IPC: G11B005/39

Abstract:
The upper portion of a magnetoresistive film is interposed between insulators in the lateral direction of a recording track in a current-perpendicular-to-the-plane structure magnetoresistive element. Domain control magnetic layers sandwich the upper portion of the magnetoresistive film along with the insulators in the lateral direction. The insulators serve to establish a narrower path for electric current between the lower portion of the magnetoresistive film and an upper electrode layer. The substantial width in the lateral direction can thus be reduced in the magnetoresistive film. In addition, a longitudinal biasing magnetic field established between the domain control magnetic layers efficiently acts on the magnetoresistive film. In particular, if a free magnetic layer is included in the upper portion of the magnetoresistive film, the free magnetic layer can be subjected to a larger longitudinal biasing magnetic field. A single domain property can be realized in the free ferromagnetic layer enough. The Barkhausen noise can be reduced.
Public/Granted literature
- US07092223B2 Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same Public/Granted day:2006-08-15
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