发明申请
US20020170497A1 Device for forming nanostructures on the surface of a semiconductor wafer by means of ion beams 审中-公开
用于通过离子束在半导体晶片的表面上形成纳米结构的装置

  • 专利标题: Device for forming nanostructures on the surface of a semiconductor wafer by means of ion beams
  • 专利标题(中): 用于通过离子束在半导体晶片的表面上形成纳米结构的装置
  • 申请号: US10069656
    申请日: 2002-05-14
  • 公开(公告)号: US20020170497A1
    公开(公告)日: 2002-11-21
  • 发明人: Valery Konstantinovich SmirnovDmitry Stanislavovich Kibalov
  • 优先权: RU2000117335 20000704
  • 主分类号: C23C016/00
  • IPC分类号: C23C016/00
Device for forming nanostructures on the surface of a semiconductor wafer by means of ion beams
摘要:
The invention makes it possible to develop the devices for producing nanostructures which are used for manufacturing the semiconductor items having high resolution optical instruments. The inventive device comprises a vacuum chamber provided with a pumping and annealing system, a unit for introducing the semiconductor wafers into the chamber, a controllable energy ion source, a mass-separator, an electron detector, a holder for the semiconductor wafer, a device for measuring the ion current, a quadrupole mass-analyzer and a computer provided with a monitor and interface. Axes of column of the ion beam transportation, an optical microscope and electron projector are arranged on the same plane as a normal line to the semiconductor wafer in a working position thereof and intercross at the same point on the front face of the wafer. An optical microscope and electron projector are arranged on the front face of the wafer and have a minimal angle therebetween.
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