公开(公告)号：US20040261717A1

公开(公告)日：2004-12-30

申请号：US10491212

申请日：2004-03-26

发明人： Nobuo Ishii ,  Kibatsu Shinohara

IPC分类号： C23C016/00

CPC分类号： H01J37/32256 ,  H01J37/32192 ,  H01P5/04

摘要： A machining device includes first branched waveguides (71A-71C) and second branched waveguides (73A-73C) connected perpendicularly to an axial (Z) direction of a cylindrical waveguide (14) and having one end which opens in the cylindrical waveguide (14) and the other end which is electrically short-circuited. The first branched waveguides (71A-71C) are arranged at a predetermined interval in an axial (z) direction of the cylindrical waveguide (14). The second branched waveguides (73A-73C) are arranged in positions which make an angle of 90null with positions of the first branched waveguides (71A-71C) when viewed from the axis (Z) of the cylindrical waveguide (14), and arranged at a predetermined interval in the axial (Z) direction of the cylindrical waveguide (14). With this arrangement, it is possible to accurately and easily control the impedance matching between the supply side and load side of the cylindrical waveguide (14).

摘要翻译： 一种加工装置包括垂直于圆柱形波导（14）的轴向（Z）方向连接并且在圆柱形波导（14）中开口的一端的第一分支波导（71A-71C）和第二分支波导（73A-73C） 另一端电气短路。 第一分支波导（71A-71C）沿圆柱形波导（14）的轴向（z）方向以预定间隔布置。 第二分支波导（73A-73C）被布置在与圆柱形波导（14）的轴线（Z）观察时与第一分支波导（71A-71C）的位置成90度角的位置，并且布置 在圆柱形波导（14）的轴向（Z）方向上以预定的间隔。 通过这种布置，可以准确且容易地控制圆柱形波导（14）的供给侧和负载侧之间的阻抗匹配。

公开(公告)号：US20040261714A1

公开(公告)日：2004-12-30

申请号：US10868255

申请日：2004-06-14

发明人： Min-Woong Choi

IPC分类号： C23C016/00

CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/3255 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136

摘要： An apparatus is provided. The apparatus comprises a chamber for loading a substrate therein, a plasma creation area in the chamber, first and second electrodes installed in the chamber, and a power source for supplying a radio frequency to the first electrode. The first electrode includes a plurality of areas having different resistances for varying the radio frequency applied to the plasma creation area. The upper electrode makes a plasma density uniform to enhance a process uniformity.

摘要翻译： 提供了一种装置。 该装置包括用于在其中装载基板的腔室，腔室中的等离子体产生区域，安装在腔室中的第一和第二电极以及用于向第一电极提供射频的电源。 第一电极包括具有不同电阻的多个区域，用于改变施加到等离子体产生区域的射频。 上电极使等离子体密度均匀，以提高工艺均匀性。

公开(公告)号：US20040261710A1

公开(公告)日：2004-12-30

申请号：US10892190

申请日：2004-07-16

申请人： Tokyo Electron Limited

发明人： Minoru Matsushita ,  Yasushi Kodashima ,  Toshikazu Kumai

IPC分类号： C23C016/00

CPC分类号： H01L21/67745 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67742 ,  Y10S414/139

摘要： Processing apparatus is disclosed, that comprises substrate container holding table that can hold substrate container that contains plurality of target substrates, first transferring chamber, disposed adjacent to the substrate container holding table, that maintains the interior at first pressure, first processing unit group, disposed around the first transferring chamber, that processes target substrate at the first pressure, first transferring mechanism, disposed in the first transferring chamber, that transfers target substrate, second transferring chamber, disposed adjacent to the first transferring chamber, that maintains the interior at second pressure, second processing unit group, disposed around the second transferring chamber, that processes target substrate at the second pressure, and second transferring mechanism, disposed in the second transferring chamber, wherein the first transferring mechanism and/or the second transferring mechanism has at least two transferring arms.

公开(公告)号：US20040261704A1

公开(公告)日：2004-12-30

申请号：US10826551

申请日：2004-04-16

发明人： Michael Heuken ,  Matthais Bode ,  Michael Pfeil ,  Juergen Schmitt

IPC分类号： C23C016/00

CPC分类号： H01L22/20 ,  C23C16/52 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention relates to a method for coating at least one substrate with one or more layers in a process chamber, in particular of a CVD installation. According to said method, starting materials, in particular in the form of organometallic reaction gases are introduced into the process chamber and their mass flow is controlled. In said chamber, the starting materials or reaction products thereof are deposited on layers on the substrate that is held by a temperature controlled substrate holder. During a coating cycle, which begins with the charging of the process chamber with the substrate or substrates and ends with the removal of the same according to a predetermined formula, the desired values of the process parameters, such as mass flows of the starting materials and temperature of the substrate holder, are set and the actual values for each substrate that correspond with the desired values of the process parameters are individually determined at intervals and are stored in a memory. During said coating cycle, or after each coating cycle, or after one or more subsequent processing steps carried out on a layer or on a layer system consisting of several layers, identifying layer characteristics, such as layer thickness and layer composition are determined and are stored by being allocated to the individualized data of the corresponding substrate. The actual values that have been obtained and the layer characteristics that have been determined for a plurality of layers deposited with the same formula are then correlated and correlation values are generated.

摘要翻译： 本发明涉及一种用于在处理室中涂覆至少一个具有一层或多层的基材的方法，特别是涉及一种CVD设备。 根据所述方法，将起始材料，特别是有机金属反应气体的形式引入处理室，并控制它们的质量流量。 在所述室中，起始材料或其反应产物沉积在由受温度控制的衬底保持器保持的衬底上的层上。 在涂覆循环期间，其开始于具有基底或基底的处理室的充电，并且根据预定的公式将其移除，其中过程参数的期望值，例如起始材料的质量流和 设置衬底保持器的温度，并且间隔地单独地确定与处理参数的期望值相对应的每个衬底的实际值，并将其存储在存储器中。 在所述涂布循环期间，或在每个涂布循环之后或在由几层组成的层或层系统上执行一个或多个后续处理步骤之后，确定识别层特征，例如层厚度和层组成，并将其存储 通过分配给相应基板的个性化数据。 然后，已经获得的实际值和用相同公式沉积的多个层确定的层特性被相关并且产生相关值。

公开(公告)号：US20040261702A1

公开(公告)日：2004-12-30

申请号：US10493683

申请日：2004-07-20

发明人： Udo Heinrich Grabowy ,  Heinz Werner Busch

IPC分类号： C23C016/00

CPC分类号： C23C16/26 ,  C23C16/513

摘要： The invention relates to a method for depositing mechanically and thermodynamically stable amorphous carbon layers using a low-pressure plasma deposition method, especially a PE-CVD or combined PVD-/PE-CVD method. According to the invention, the average kinetic energy per deposited carbon atom is lower than 20 eV, preferably lower than 10 eV, and the ionic current density j is smaller than 0.2 mA/cm2, and preferably smaller than 0.1 mA/cm2.

公开(公告)号：US20040258851A1

公开(公告)日：2004-12-23

申请号：US10602467

申请日：2003-06-23

发明人： Venkat Selvamanickam ,  Srinivas Sathiraju

IPC分类号： C23C016/00

CPC分类号： C23C14/54 ,  C23C14/22 ,  C23C14/32 ,  C23C14/562 ,  H01J2237/3142 ,  H01L39/2461 ,  Y10T29/49014

摘要： Disclosed is an ion beam-assisted deposition system that includes a bi-lateral RF ion source system that, when used in conjunction with an electron beam, magnetron or ion beam evaporator assembly, creates a deposition zone of sufficient width to enable simultaneous deposition onto a plurality of parallel-arranged translating metal substrate tapes. The arrangement of the bilateral RF ion source is such that a pair of RF ion sources is arranged on opposite sides of an evaporation source in such a manner that a pair of ion beams is directed toward a translating set of parallel-arranged substrate tapes at incident angles of, for example, 55 degrees.

摘要翻译： 公开了一种离子束辅助沉积系统，其包括双边RF离子源系统，当与电子束，磁控管或离子束蒸发器组件结合使用时，产生足够宽度的沉积区域，以便同时沉积到 多个平行布置的平移金属基底带。 双边RF离子源的布置使得一对RF离子源被布置在蒸发源的相对侧上，使得一对离子束在入射时指向平行布置的基板带的平移组 例如55度的角度。

公开(公告)号：US20040258842A1

公开(公告)日：2004-12-23

申请号：US10868785

申请日：2004-06-17

发明人： Noriaki Hamaya

IPC分类号： C23C016/00

CPC分类号： C23C4/18 ,  C23C4/01 ,  Y10T428/12611 ,  Y10T428/30

摘要： By thermal spraying, a coating having an embossed or slit pattern is formed on a substrate to construct a coated member. When the coated member is used for sintering compacts, the embossed or slit pattern on the surface helps prevent the compacts from sticking to the coated member during sintering, discourages coating separation due to thermal cycling, and provides the coated member with excellent durability. Such coated members can be effectively used for sintering or heat treating ceramics and powder metallurgy metals, particularly cermets and cemented carbides, in a vacuum, oxidizing atmosphere, inert atmosphere or reducing atmosphere.

摘要翻译： 通过热喷涂，在基材上形成具有压纹或狭缝图案的涂层以构成涂布部件。 当涂覆的构件用于烧结压块时，表面上的压花或狭缝图案有助于防止压块在烧结期间粘附到涂覆构件，阻止由于热循环而导致的涂层分离，并且为涂层构件提供优异的耐久性。 这种涂布部件可以在真空，氧化气氛，惰性气氛或还原气氛中有效地用于烧结或热处理陶瓷和粉末冶金金属，特别是金属陶瓷和硬质合金。

公开(公告)号：US20040255860A1

公开(公告)日：2004-12-23

申请号：US10869665

申请日：2004-06-16

发明人： Jae-Won Han

IPC分类号： C23C016/00

CPC分类号： H01L21/67253 ,  C30B31/10 ,  C30B33/00

摘要： Rapid thermal processing apparatus methods are disclosed. In a disclosed apparatus, rapid thermal processing is carried out when the residual oxygen detected by a residual oxygen detector does not exceed a predetermined tolerance level. Accordingly, it is possible to prevent the contact resistance of the wafers from increasing due to the presence of excessive oxygen.

摘要翻译： 公开了快速热处理装置的方法。 在公开的装置中，当由残留氧气检测器检测到的残余氧没有超过预定的容限水平时，进行快速热处理。 因此，可以防止晶片的接触电阻由于存在过量的氧而增加。

公开(公告)号：US20040253378A1

公开(公告)日：2004-12-16

申请号：US10461638

申请日：2003-06-12

申请人： Applied Materials, Inc.

发明人： Francimar C. Schmitt ,  Hichem M'Saad

IPC分类号： C23C016/00

CPC分类号： H01L21/31633 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274

摘要： A method for depositing a low dielectric constant film having a dielectric constant of about 3.2 or less, preferably about 3.0 or less, includes providing a cyclic organosiloxane and a linear hydrocarbon compound having at least one unsaturated carbon-carbon bond to a substrate surface. In one aspect, the cyclic organosiloxane and the linear hydrocarbon compound are reacted at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate. Preferably, the low dielectric constant film has compressive stress.

摘要翻译： 介电常数约为3.2以下，优选为3.0以下的低介电常数膜的制造方法包括向基板表面提供具有至少一个不饱和碳 - 碳键的环状有机硅氧烷和线性烃化合物。 一方面，环状有机硅氧烷和直链烃化合物在足以在半导体衬底上沉积低介电常数膜的条件下进行反应。 优选地，低介电常数膜具有压应力。

公开(公告)号：US20040250776A1

公开(公告)日：2004-12-16

申请号：US10809795

申请日：2004-03-26

发明人： Masaki Mizuochi ,  Yoshimasa Fukushima ,  Tadayuki Kubo

IPC分类号： C23C016/00

CPC分类号： G03F7/70858 ,  G03F7/70841 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/31793

摘要： To realize the temperature control of the sample-setting portion and enable to perform exposure or inspection of samples accurately while preventing the generation of dust, deterioration of the degree of vacuum and contamination in a vacuum atmosphere. (Means of Solving the Problems) The top table 21 or sample holding mechanism 7 is equipped with a temperature sensor 23, the flow path 251 of the heat-exchanging medium 241 is provided inside the non-moving fixed side guide member 181, and the temperature of the sample-setting portion is controlled through the control of the medium 241. Since the flow path 251 of the heat-exchanging medium 241 is located in a stationary portion, it is possible to control the temperature of the sample-setting portion while preventing the generation of dust due to flexible piping, damage to vacuum pump and contamination in a vacuum atmosphere caused by the heat-exchanging medium 241.

摘要翻译： 为了实现样品设定部的温度控制，能够准确地进行样品的曝光或检查，同时防止灰尘的产生，真空度的劣化和真空气氛中的污染。 （解决问题的方法）顶台21或样品保持机构7配备有温度传感器23，热交换介质241的流路251设置在不动的固定侧引导构件181的内部， 通过控制介质241来控制样品设定部分的温度。由于热交换介质241的流路251位于静止部分中，因此可以控制样品设定部分的温度，同时 防止由于柔性管道产生灰尘，真空泵的损坏和由热交换介质241引起的真空气氛中的污染。