Radiation-hardened silicon-on-insulator CMOS device, and method of making the same

发明申请

US20020171104A1 Radiation-hardened silicon-on-insulator CMOS device, and method of making the same 有权

标题翻译：辐射硬化硅绝缘体CMOS器件及其制造方法

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专利标题： Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
专利标题（中）： 辐射硬化硅绝缘体CMOS器件及其制造方法
申请号： US09828289

申请日： 2001-04-05
公开(公告)号： US20020171104A1

公开(公告)日： 2002-11-21
发明人: James S. Cable , Eugene F. Lyons , Michael A. Stuber , Mark L. Burgener
主分类号： H01L027/01
IPC分类号： H01L027/01 ; H01L027/12 ; H01L031/0392

Radiation-hardened silicon-on-insulator CMOS device, and method of making the same

摘要：

A method for eliminating the radiation-induced off-state current in the P-channel ultrathin silicon-on-sapphire transistor, by providing a retrograde dopant concentration profile that has the effect of moving the Fermi level at the back of the device away from that part of the bandgap where the interface states are located. When the Fermi level does not swing through this area in any region of operation of the device, subthreshold stretchout of the I-V curves does not occur.

摘要（中）：

一种通过提供逆向掺杂剂浓度分布来消除P沟道超薄蓝宝石硅晶体管中的辐射诱发截止电流的方法，其具有使器件背面的费米能级远离该器件背面的效应。接口状态所在的带隙的一部分。当在设备的任何操作区域中费米能级别不通过该区域时，不会发生I-V曲线的亚阈值延伸。

公开/授权文献

US06531739B2 Radiation-hardened silicon-on-insulator CMOS device, and method of making the same 公开/授权日：2003-03-11

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