Disclosed are apparatus and method for measuring Hall effect related-values in a semiconductor, such as a mobility, a carrier concentration and a resistivity using a Hall effect. A sample is loaded into an IC socket or a similar target, which is fixed on the inside of a heat insulating material container capable of containing injected liquid nitrogen. The Hall effect related-values are measured using a moving member for moving a pair of permanent magnets to an outside of the heat insulating material container. The measuring equipment has a simple structure, and a measuring operation is simple. A level of an input voltage of a sample is measured depending on a constant current that is supplied by a constant current supplying unit contained in a Hall voltage measurement unit. A measurement error detection unit detects and displays a measurement error of the sample using the level of the measured input voltage. Since the measurement error is detected before measuring the Hall effect, the measurement error can be excluded.