Method of processing substrate, method of forming film, and method and apparatus for manufacturing electron source

Invention Application

US20020193034A1 Method of processing substrate, method of forming film, and method and apparatus for manufacturing electron source 失效

Title translation: 基板的处理方法，薄膜的形成方法以及电子源的制造方法和装置

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Patent Title: Method of processing substrate, method of forming film, and method and apparatus for manufacturing electron source
Patent Title (中): 基板的处理方法，薄膜的形成方法以及电子源的制造方法和装置
Application No.: US10152827

Application Date: 2002-05-23
Publication No.: US20020193034A1

Publication Date: 2002-12-19
Inventor: Jiro Ota
Priority: JP159200/2001(PAT. 20010528; JP144553/2002(PAT. 20020520
Main IPC: H01J009/395
IPC: H01J009/395 ; H01J009/38 ; H01L021/00

Method of processing substrate, method of forming film, and method and apparatus for manufacturing electron source

Abstract:

To attain an increase in production speed and suitable for mass production in a substrate processing operation such as film formation requiring a hermetic atmosphere. A substrate processing method for performing a predetermined processing on a substrate is provided, which includes the steps of: arranging a surface of the substrate to be processed in a hermetic atmosphere; evacuating said hermetic atmosphere; and performing a predetermined processing on the substrate, in which the processing step is conducted after moving the evacuated hermetic atmosphere from the station for evacuation to a ifferent station.

Abstract(Chinese):

为了获得生产速度的提高并且适合于在需要密封气氛的成膜等基板加工操作中适合批量生产。提供了一种用于在基板上执行预定处理的基板处理方法，其包括以下步骤：在密封气氛中布置待处理的基板的表面; 疏散所述气密的气氛; 对基板进行预定的处理，其中在将撤离的密闭气氛从撤离站撤回到不同的站之后进行处理步骤。

Public/Granted literature

US06872112B2 Method of processing substrate, method of forming film, and method and apparatus for manufacturing electron source Public/Granted day:2005-03-29

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