发明申请
- 专利标题： Pattern formation method
- 专利标题（中）： 图案形成方法
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申请号： US10236921申请日： 2002-09-09
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公开(公告)号： US20030049570A1公开(公告)日： 2003-03-13
- 发明人: Masayuki Endo , Masaru Sasago
- 申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 申请人地址： JP Osaka
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JP2001-277992 20010913
- 主分类号： G03F007/30
- IPC分类号： G03F007/30 ; G03F007/42
摘要：
In the pattern formation method of the invention, a resist film made of a chemically amplified resist is formed on a substrate. The resist film is selectively exposed to light for pattern exposure. The pattern-exposed resist film is subjected to a developer, and the resultant resist film is rinsed with an alkaline rinsing liquid to form a resist pattern made of the resist film.
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