公开(公告)号：US20040157170A1

公开(公告)日：2004-08-12

申请号：US10248707

申请日：2003-02-11

发明人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ebrahim Andideh

IPC分类号： G03F007/42

CPC分类号： G03F7/427 ,  H01L21/31122 ,  H01L21/31138

摘要： A low temperature plasma ashing process for use with substrates comprising a ferroelectric material. The process generally includes plasma ashing the photoresist and residues at a temperature of about room temperature to about 140null C., wherein the plasma is generated from a gas mixture consisting essentially of hydrogen and an inert gas, and wherein the ferroelectric material is exposed to the plasma.

摘要翻译： 用于与包含铁电材料的基板一起使用的低温等离子体灰化方法。 该方法通常包括在约室温至约140℃的温度下等离子体等离子体灰化光致抗蚀剂和残余物，其中等离子体由基本上由氢气和惰性气体组成的气体混合物产生，并且其中铁电材料暴露于 等离子体。

公开(公告)号：US20040101788A1

公开(公告)日：2004-05-27

申请号：US10301973

申请日：2002-11-21

发明人： Hong-Sik Park ,  Sung-Chul Kang ,  Hong-Je Cho ,  An-Na Park

IPC分类号： G03F007/40 ,  G03F007/42

CPC分类号： G03F7/425

摘要： The invention relates to a TFT-LCD high-performance stripper composition for a photoresist, and more particularly to a stripper composition for a photoresist comprising: 20-60 wt % of monoethanolamine, 15-50 wt % of N,N-dimethylacetamide, 15-50 wt % of carbitol, and 0.1-10 wt % of gallic acid. The invention also provides a stripper composition for a photoresist comprising: 20-60 wt % of monoethanolamine, 15-50 wt % of N,N-dimethylacetamide, and 15-50 wt % of carbitol. The stripper composition for a photoresist of the invention significantly reduces stripping time when applied to the TFT-LCD manufacturing process and leaves no impurity particles. By allowing the hard baking and ashing processes to be omitted, the gate process line can be simplified, which enables cost reduction. In addition, when it is applied to a process wherein silver (Ag) is used as reflective/transflective layer, it offers stripping ability and corrosion resistance of the pure Ag layer.

摘要翻译： 本发明涉及一种用于光致抗蚀剂的TFT-LCD高性能剥离组合物，更具体地说，涉及一种用于光致抗蚀剂的剥离剂组合物，包括：20-60重量％的单乙醇胺，15-50重量％的N，N-二甲基乙酰胺，15 -50重量％的卡必醇和0.1-10重量％的没食子酸。 本发明还提供了一种用于光致抗蚀剂的汽提组合物，其包含：20-60重量％的单乙醇胺，15-50重量％的N，N-二甲基乙酰胺和15-50重量％的卡必醇。 当应用于TFT-LCD制造工艺时，本发明的光致抗蚀剂的剥离剂组合物显着减少剥离时间，并且不留下杂质颗粒。 通过允许省略硬烘烤和灰化过程，可以简化浇口生产线，这降低了成本。 另外，当将其应用于其中使用银（Ag）作为反射/半透反射层的工艺时，其提供纯Ag层的剥离能力和耐腐蚀性。

公开(公告)号：US20040081922A1

公开(公告)日：2004-04-29

申请号：US10363064

申请日：2003-02-28

发明人： Kazuto Ikemoto ,  Hisake Abe ,  Taketo Maruyama ,  Tetsuo Aoyama

IPC分类号： G03F007/42 ,  C11D001/00

CPC分类号： G03F7/425

摘要： The photoresist stripping composition of the present invention comprises an amine compound and at least one alkanol amide compound selected from the group consisting of compounds represented by Formula I or II: 1 wherein R1, R2 and R3 are the same as defined in the specification, and polymers of the compounds of Formula I wherein R1 is alkenyl group. By using the photoresist stripping composition, the photoresist film remaining after dry etching and the resist residue after ashing can be quite easily removed without corroding the wiring material, etc.

摘要翻译： 本发明的光致抗蚀剂剥离组合物包含胺化合物和选自由式I或II表示的化合物中的至少一种链烷醇酰胺化合物：其中R 1，R 2和R 3为 与说明书中定义的相同，以及其中R 1为烯基的式I化合物的聚合物。 通过使用光致抗蚀剂剥离组合物，干蚀刻后残留的光致抗蚀剂膜和灰化后的抗蚀剂残留物可以非常容易地除去而不会腐蚀布线材料等。

公开(公告)号：US20030113673A1

公开(公告)日：2003-06-19

申请号：US10116030

申请日：2002-04-05

发明人： Seung-Hyun Ahn ,  Sang-Mun Chon ,  Hoe-Sik Chung ,  Mi-Sook Jeon ,  Eun-Mi Bae ,  Baik-Soon Choi ,  Ok-Seok Jang

IPC分类号： G03F007/42

CPC分类号： G03F7/168 ,  G03F7/422

摘要： A photoresist stripper composition is made up of a mixture of an acetic acid ester, null-butyrolactone (GBL), and a non-acetate ester or a poly alkyl alcohol derivative. The acetic acid ester may be at least one of n-butyl acetate, amyl acetate, ethyl aceto-acetate, and isopropyl acetate. The non-acetate ester may be at least one of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP) and methyl-3-methoxy (MMP). The poly alkyl alcohol derivative may be at least one of propylene glycol monomethyl ester (PGME) and propylene glycol monomethyl ester acetate (PGMEA).

摘要翻译： 光致抗蚀剂剥离剂组合物由乙酸酯，γ-丁内酯（GBL）和非乙酸酯或多烷基醇衍生物的混合物组成。 乙酸酯可以是乙酸正丁酯，乙酸戊酯，乙酸乙酯和乙酸异丙酯中的至少一种。 非乙酸酯酯可以是乳酸乙酯（EL），乙基-3-乙氧基丙酸酯（EEP）和甲基-3-甲氧基（MMP）中的至少一种。 聚烷基醇衍生物可以是丙二醇单甲酯（PGME）和丙二醇单甲酯乙酸酯（PGMEA）中的至少一种。

公开(公告)号：US20020068237A1

公开(公告)日：2002-06-06

申请号：US09976279

申请日：2001-10-15

发明人： Genji Imai

IPC分类号： G03F007/038 ,  G03F007/42 ,  G03F007/38

CPC分类号： G03F7/34 ,  C08F2/50 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/346

摘要： The present invention provides a negative photosensitive resin composition comprising (A) a photocurable resin having a photosensitive group or groups crosslinkable by light irradiation, (B) a photoacid generator and (C) a photosensitizer which is a benzopyran condensed ring compound capable of increasing photosensitivity to visible light with a wavelength of 480 nm or more, a negative photosensitive dry film prepared by applying the photosensitive resin composition to a surface of support film, followed by drying, to form a photosensitive resin layer, and a method of forming a pattern using the resin composition or the dry film.

摘要翻译： 本发明提供一种负型感光性树脂组合物，其包含（A）具有感光性基团的光固化性树脂或通过光照射可交联的光固化性树脂，（B）光致酸产生剂和（C）能够增加光敏性的苯并吡喃稠环化合物的光敏剂 对于波长为480nm以上的可见光，通过将感光性树脂组合物涂布在支撑膜的表面，然后干燥而形成感光性树脂层而制备的负型感光性干膜，以及使用 树脂组合物或干膜。

公开(公告)号：US20040241594A1

公开(公告)日：2004-12-02

申请号：US10840707

申请日：2004-05-06

发明人： Chi-Ming Cheng

IPC分类号： G03F007/42

CPC分类号： G03F9/7084 ,  G03F7/0007 ,  G03F7/168 ,  G03F9/00 ,  G03F9/708

摘要： A method for removing color resist from an exposure alignment mark. In an embodiment, a color resist layer is formed over a color filter substrate with an alignment mark thereon. A concentric tube system is provided with an outer tube surrounding an inner tube. A solvent is injected via the inner tube to contact and dissolve the color resist directly overlying the alignment mark. The dissolved color resist is extracted by the outer tube of the concentric tube system to expose the alignment mark. By repeating the dissolving and extraction steps, all alignment marks on the color filter substrate are consequently uncovered for subsequent exposure alignment.

摘要翻译： 一种从曝光对准标记去除彩色抗蚀剂的方法。 在一个实施例中，在其上具有对准标记的滤色器基板上形成着色抗蚀剂层。 同心管系统设置有围绕内管的外管。 通过内管注入溶剂，使直接覆盖对准标记的抗蚀剂接触并溶解。 溶解的抗蚀剂由同心管系的外管提取以露出对准标记。 通过重复溶解和提取步骤，滤色器基底上的所有对准标记因此被覆盖以用于随后的曝光对准。

公开(公告)号：US20040161711A1

公开(公告)日：2004-08-19

申请号：US10732734

申请日：2003-12-10

申请人： ARCH SPECIALTY CHEMICALS, INC.

发明人： Ilya Rushkin ,  Ahmad A. Naiini ,  William D. Weber ,  Don Perry ,  Richard Hopla

IPC分类号： G03F007/20 ,  G03F007/30 ,  G03F007/40 ,  G03F007/38 ,  G03F007/42

CPC分类号： C08G73/1032 ,  C08G73/10 ,  C08L79/08 ,  C09D179/08 ,  G03F7/085 ,  G03F7/094 ,  G03F7/11

摘要： Stable non-photosensitive polyimide precursor compositions with an adhesion promoter in a non-NMP solvent for use in forming high temperature resistant relief images and a process for making said images. The non-photosensitive polyimide precursor compositions comprise a) one or more polyamic acids soluble in gamma-butyrolactone (GBL) and aqueous tetramethyl ammonium hydroxide, and with the proviso that the polyamic acid is also resistant to a solvent used in a photosensitive composition with which the polyimide precursor composition is to be used; b) a solvent comprising gamma-butyrolactone; and c) one or more adhesion promoters selected from structures described by Formulae I-VI 1 wherein R1 is H, C1-C10 linear, cyclic or branched alkyl, phenyl or halophenyl or alkyl substituted phenyl, R2 is C1-C10 linear, cyclic or branched alkyl, phenyl, halophenyl or alkyl substituted phenyl or one of the following moieties VII, VIII, or IX 2 where R3 is C1-C4 linear or branched alkyl or C1-C4 linear or branched alkoxy group, R4, R5 and R6 are independently C1-C4 linear or branched alkyl group, m is an integer from 1 to about 4, and n is an integer from 1 to about 5.

摘要翻译： 在用于形成耐高温浮雕图像的非NMP溶剂中具有粘合促进剂的稳定的非感光性聚酰亚胺前体组合物和制备所述图像的方法。 非感光性聚酰亚胺前体组合物包含a）一种或多种可溶于γ-丁内酯（GBL）和四甲基氢氧化铵水溶液的聚酰胺酸，并且条件是聚酰胺酸也对光敏组合物中使用的溶剂具有抗性， 要使用聚酰亚胺前体组合物; b）包含γ-丁内酯的溶剂; 和c）选自式I-VI所示结构的一种或多种粘合促进剂，其中R 1是H，C 1 -C 10直链，环状或支链烷基，苯基或卤代苯基或烷基取代的苯基，R 2是C1- C10直链，环状或支链烷基，苯基，卤代苯基或烷基取代的苯基或以下部分VII，VIII或IX之一，其中R 3为C 1 -C 4直链或支链烷基或C 1 -C 4直链或支链烷氧基， R 4，R 5和R 6独立地为C 1 -C 4直链或支链烷基，m为1至约4的整数，n为1至约5的整数。

公开(公告)号：US20040081924A1

公开(公告)日：2004-04-29

申请号：US10467354

申请日：2003-08-04

发明人： Hayato Iwamoto ,  Ryuichi Kanamura ,  Ai Endou ,  Tomoko Suzuki ,  Toshitaka Hiraga

IPC分类号： G03F007/42

CPC分类号： G03F7/425 ,  G03F7/422 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/76802

摘要： A resist stripping composition capable of reliably stripping off resist residue or polymer residue and keeping damage to the interconnects to a minimum and a method of producing a semiconductor device using the same, where the resist stripping composition comprises a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and has a hydrogen ion concentration of at least 8. The method of production of a semiconductor device comprises dry etching a metal layer or a semiconductor layer on a semiconductor substrate to form an interconnect layer having a predetermined pattern or forming an insulation layer on a semiconductor substrate formed with an interconnect layer and dry etching this to a predetermined pattern, then performing chemical treatment using a resist stripping composition comprising a salt of hydrofluoric acid and a base not including a metal, an organic solvent, a sugar alcohol such as xylitol, and water and having a hydrogen ion concentration of at least 8.

摘要翻译： 能够可靠地剥离抗蚀剂残留物或聚合物残余物并将互连件的损伤保持最小化的抗蚀剂剥离组合物和使用其的制造半导体器件的方法，其中抗蚀剂剥离组合物包含氢氟酸盐和不含碱 包括金属，有机溶剂，糖醇如木糖醇和水，并且具有至少8的氢离子浓度。半导体器件的制造方法包括在半导体衬底上干蚀刻金属层或半导体层 以形成具有预定图案的互连层或在形成有互连层的半导体衬底上形成绝缘层，并将其干蚀刻至预定图案，然后使用包含氢氟酸盐和碱的抗蚀剂剥离组合物进行化学处理 不包括金属，有机溶剂，糖醇如木糖醇，以及水和 氢离子浓度至少为8。

公开(公告)号：US20030181342A1

公开(公告)日：2003-09-25

申请号：US10105704

申请日：2002-03-25

发明人： Ma. Fatima Seijo ,  William A. Wojtczak ,  David Bernhard ,  Thomas H. Baum ,  David Minsek

IPC分类号： G03F007/40 ,  G03F007/42

CPC分类号： H01L21/02063 ,  C11D7/265 ,  C11D7/28 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/02071

摘要： A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic solvent, and a fluoride source.

摘要翻译： 一种用于从用于半导体器件的干法蚀刻工艺中形成的半导体晶片衬底中去除颗粒的半水性清洁配方，所述清洁配方包括缓冲系统，极性有机溶剂和氟化物源。

公开(公告)号：US20030156378A1

公开(公告)日：2003-08-21

申请号：US10081479

申请日：2002-02-21

申请人： Taiwan semiconductor Manufacturing Co., Ltd.

发明人： Min-Hsiung Chiang ,  Chi-Hsin Lo

IPC分类号： H01G004/06 ,  H01G004/20 ,  H01L029/00 ,  G03F007/16 ,  G03F007/34 ,  G03F007/42 ,  C23C014/00

CPC分类号： H01L23/5223 ,  H01L21/76808 ,  H01L21/76838 ,  H01L23/53238 ,  H01L27/10852 ,  H01L27/10882 ,  H01L27/10894 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for integrating copper with an MIM capacitor during the formation the MIM capacitor. The MIM capacitor is generally formed upon a substrate and at least one copper layer is deposited upon the substrate and layers thereof to form at least one metal layer from which the MIM capacitor is formed, such that the MIM capacitor may be adapted for use with an embedded DRAM device. The MIM capacitor comprises a low-temperature MIM capacitor. At least one DRAM crown photo layer may be formed upon the substrate and layers thereof to form the MIM capacitor. The number of additional lithographic steps required in BEOL manufacturing operations is thus only one, while the capacitance of the MIM capacitor can be improved greatly because the sequential process of the DRAM crown photo patterning steps may be altered.

摘要翻译： 在MIM电容器形成期间，将铜与MIM电容器集成的方法。 MIM电容器通常形成在衬底上，并且至少一个铜层沉积在衬底及其层上以形成MIM电容器形成的至少一个金属层，使得MIM电容器可适用于 嵌入式DRAM设备。 MIM电容器包括低温MIM电容器。 可以在衬底及其层上形成至少一个DRAM冠光敏层以形成MIM电容器。 因此，在BEOL制造操作中所需的附加光刻步骤的数量仅为一个，而MIM电容器的电容可以大大提高，因为可以改变DRAM冠光栅图案化步骤的顺序处理。