发明申请
- 专利标题: Pressure modulation method to obtain improved step coverage of seed layer
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申请号: US10262652申请日: 2002-09-30
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公开(公告)号: US20030066747A1公开(公告)日: 2003-04-10
- 发明人: Arvind Sundarrajan , Darryl Angelo , Peiijun Ding , Barry Chin , Imran Hasim
- 申请人: Applied Materials, Inc.
- 申请人地址: null
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: null
- 主分类号: C23C014/32
- IPC分类号: C23C014/32 ; C23C014/00
摘要:
A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.
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