公开(公告)号：US20030066747A1

公开(公告)日：2003-04-10

申请号：US10262652

申请日：2002-09-30

申请人： Applied Materials, Inc.

发明人： Arvind Sundarrajan ,  Darryl Angelo ,  Peiijun Ding ,  Barry Chin ,  Imran Hasim

IPC分类号： C23C014/32 ,  C23C014/00

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/3492 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/3402 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76873 ,  H01L21/76877

摘要： A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.