Invention Application
- Patent Title: Process for selectively etching dielectric layers
- Patent Title (中): 用于选择性地蚀刻介电层的工艺
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Application No.: US10016562Application Date: 2001-12-12
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Publication No.: US20030109143A1Publication Date: 2003-06-12
- Inventor: Chang-Lin Hsieh , Jie Yuan , Hui Chen , Theodoros Panagopoulos , Yan Ye
- Applicant: Applied Materials, Inc.
- Applicant Address: null
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: null
- Main IPC: H01L021/302
- IPC: H01L021/302 ; H01L021/461

Abstract:
A method is provided for etching a dielectric structure. The dielectric structure comprises: (a) a layer of undoped silicon oxide or F-doped silicon oxide; and (b) a layer of C,H-doped silicon oxide. The dielectric structure is etched in a plasma-etching step, which plasma-etching step is conducted using a plasma source gas that comprises nitrogen atoms and fluorine atoms. As one example, the plasma source gas can comprise a gaseous species that comprises one or more nitrogen atoms and one or more fluorine atoms (e.g., NF3). As another example, the plasma source gas can comprise (a) a gaseous species that comprises one or more nitrogen atoms (e.g., N2) and (b) a gaseous species that comprises one or more fluorine atoms (e.g., a fluorocarbon gas such as CF4). In this etching step, the layer of C,H-doped silicon oxide is preferentially etched relative to the layer of undoped silicon oxide or F-doped silicon oxide. The method of the present invention is applicable, for example, to dual damascene structures.
Public/Granted literature
- US06905968B2 Process for selectively etching dielectric layers Public/Granted day:2005-06-14
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