公开(公告)号：US20040074869A1

公开(公告)日：2004-04-22

申请号：US10273580

申请日：2002-10-18

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Hui Chen ,  Anbei Jiang ,  Hong Shih ,  Steve S. Y. Mak

IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68

CPC classification number: C23F4/00 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32139 ,  Y10S438/905

Abstract: A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2 or Cl2 and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2 etch and C2H4 diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2 chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.

Abstract translation: 一种用于等离子体蚀刻铝线的无氟集成方法，其集成电路结构包括上覆抗反射涂层（ARC）和铝下方的介电层，该方法优选在单个等离子体反应器中进行。 ARC打开使用BCl3 / Cl2或Cl2和可能的烃钝化气体，优选C2H4。 铝主蚀刻优选包括用He稀释的BCl3 / Cl2蚀刻和C2H4。 稀释液对于C2H4的小流量特别有效。 对Ti / TiN阻挡层进行过度蚀刻并且部分地进入下面的电介质可以使用类似于主蚀刻的化学。 可以执行Cl 2 / O 2室清洁，优选地，从晶片从腔室中移除并且在每个晶圆循环之后。

公开(公告)号：US20030109143A1

公开(公告)日：2003-06-12

申请号：US10016562

申请日：2001-12-12

Applicant: Applied Materials, Inc.

Inventor： Chang-Lin Hsieh ,  Jie Yuan ,  Hui Chen ,  Theodoros Panagopoulos ,  Yan Ye

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/31116 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76808 ,  H01L21/76835

Abstract: A method is provided for etching a dielectric structure. The dielectric structure comprises: (a) a layer of undoped silicon oxide or F-doped silicon oxide; and (b) a layer of C,H-doped silicon oxide. The dielectric structure is etched in a plasma-etching step, which plasma-etching step is conducted using a plasma source gas that comprises nitrogen atoms and fluorine atoms. As one example, the plasma source gas can comprise a gaseous species that comprises one or more nitrogen atoms and one or more fluorine atoms (e.g., NF3). As another example, the plasma source gas can comprise (a) a gaseous species that comprises one or more nitrogen atoms (e.g., N2) and (b) a gaseous species that comprises one or more fluorine atoms (e.g., a fluorocarbon gas such as CF4). In this etching step, the layer of C,H-doped silicon oxide is preferentially etched relative to the layer of undoped silicon oxide or F-doped silicon oxide. The method of the present invention is applicable, for example, to dual damascene structures.

Abstract translation: 提供了蚀刻电介质结构的方法。 电介质结构包括：（a）一层未掺杂的氧化硅或掺杂F的氧化硅; 和（b）C，H掺杂的氧化硅层。 在等离子体蚀刻步骤中蚀刻电介质结构，使用包含氮原子和氟原子的等离子体源气体进行等离子体蚀刻步骤。 作为一个示例，等离子体源气体可以包括包含一个或多个氮原子和一个或多个氟原子（例如NF 3）的气态物质。 作为另一示例，等离子体源气体可以包括（a）包含一个或多个氮原子（例如，N 2）的气体物质和（b）包含一个或多个氟原子的气态物质（例如，碳氟化合物气体，例如 CF4）。 在该蚀刻步骤中，相对于未掺杂的氧化硅层或掺杂F的氧化硅层优先蚀刻C，H掺杂的氧化硅层。 本发明的方法例如适用于双镶嵌结构。

公开(公告)号：US20030190870A1

公开(公告)日：2003-10-09

申请号：US10115682

申请日：2002-04-03

Applicant: Applied Materials, Inc.

Inventor： Hong Shih ,  Danny Chien Lu ,  Nianci Han ,  Xikun Wang ,  Hui Chen ,  Hui Tang ,  Li Xu ,  Yang Zhang ,  Dan Wang

IPC: B24C001/00

CPC classification number: B08B3/08 ,  B08B7/0035 ,  B08B7/04

Abstract: Method and apparatus for cleaning ceramic surfaces of parts used, for example, and without limitation, in semiconductor processing equipment. In particular, one embodiment of the present invention is a method for cleaning a ceramic part that includes steps of: (a) treating the surface using one or more first mechanical processes; (b) treating the surface using one or more chemical processes; (c) plasma conditioning the surface; and (d) treating the surface using one or more second mechanical processes.

Abstract translation: 用于清洁陶瓷表面的方法和装置，例如但不限于在半导体加工设备中使用的部件。 特别地，本发明的一个实施方案是用于清洁陶瓷部件的方法，其包括以下步骤：（a）使用一个或多个第一机械工艺处理所述表面; （b）使用一种或多种化学方法处理表面; （c）等离子体调理表面; 和（d）使用一个或多个第二机械过程处理表面。

公开(公告)号：US20040200498A1

公开(公告)日：2004-10-14

申请号：US10410042

申请日：2003-04-08

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Hui Chen ,  Lucy Zhiping Chen ,  Li Xu ,  Anbei Jiang ,  Hong Shih ,  Steve Mak

IPC: C25F001/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/321 ,  H01J37/32935

Abstract: A method of cleaning process residues formed on surfaces in a chamber during processing of a substrate in the chamber includes first and second steps. In a first cleaning step, a first energized cleaning gas having a first chlorine-containing gas and oxygen is provided in the chamber and then exhausted. In a second cleaning step, a second energized cleaning gas having a second chlorine-containing gas and oxygen is provided in the chamber and then exhausted.

Abstract translation: 在腔室中的基底处理期间清洁在室中的表面上形成的处理残留物的方法包括第一和第二步骤。 在第一清洗步骤中，在室内设置具有第一含氯气体和氧气的第一带电清洁气体，然后排出。 在第二清洗步骤中，在室中设置具有第二含氯气体和氧气的第二带电清洁气体，然后排出。

公开(公告)号：US20030209520A1

公开(公告)日：2003-11-13

申请号：US10143489

申请日：2002-05-09

Applicant: Applied Materials, Inc.

Inventor： Hui Chen ,  Xikun Wang ,  Hong Shih ,  Chun Yan ,  Wai-Fan Yau

IPC: C03C025/68 ,  H01L021/461

CPC classification number: C03C17/34 ,  C03C2218/33 ,  H01L21/0276 ,  H01L21/31138 ,  H01L21/32139

Abstract: One embodiment of the present invention is a process for etching an organic anti-reflective coating on a base of a substrate, the process including steps of: (a) placing the substrate into a processing chamber; (b) introducing into the processing chamber a processing gas including one or more of carbon monoxide (CO), carbon dioxide (CO2), and sulfur oxide (SO2); and (c) forming a plasma from the processing gas to etch the organic anti-reflective coating layer.

Abstract translation: 本发明的一个实施方案是用于在衬底的基底上蚀刻有机抗反射涂层的方法，该方法包括以下步骤：（a）将衬底放置在处理室中; （b）将包括一氧化碳（CO），二氧化碳（CO 2）和硫氧化物（SO 2））中的一种或多种的处理气体引入处理室; 和（c）从处理气体形成等离子体以蚀刻有机抗反射涂层。