Invention Application
US20030164048A1 Solid-state strain sensor and method of manufacture 有权
固态应变传感器及其制造方法

  • Patent Title: Solid-state strain sensor and method of manufacture
  • Patent Title (中): 固态应变传感器及其制造方法
  • Application No.: US10198410
    Application Date: 2002-07-18
  • Publication No.: US20030164048A1
    Publication Date: 2003-09-04
  • Inventor: Yuri M. Shkel
  • Main IPC: G01L001/00
  • IPC: G01L001/00
Solid-state strain sensor and method of manufacture
Abstract:
An apparatus and method directed to a solid-state capacitance sensor for measuring a strain force on a dielectric having a corresponding dielectric constant includes at least one pair of electrodes disposed so as to interface with the dielectric. The sensor preferably includes a measuring circuit coupled to the electrodes to measure a change in the dielectric constant in response to the force. In operation, the change in the dielectric constant is caused by an electrostrictive response of the dielectric upon deformation. Preferably, the response is quantified by computing a change in the dielectric constant based on a measured change in capacitance. The electrodes may be fixed to the dielectric, and the measuring circuit determines the change in the dielectric constant by measuring a change in capacitance between the pair of electrodes and then computing the change in the dielectric constant. The force can then be computed based on both the change in dielectric constant and the electrostriction parameters associated with the dielectric.
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