发明申请
- 专利标题： Method and structure for low capacitance ESD robust diodes
- 专利标题（中）： 低容量ESD稳健二极管的方法和结构
-
申请号： US09683985申请日： 2002-03-08
-
公开(公告)号： US20030168701A1公开(公告)日： 2003-09-11
- 发明人: Steven H. Voldman
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L023/62
- IPC分类号： H01L023/62
摘要：
A diode having a capacitance below 0.1 pF and a breakdown voltage of at least 500V. The diode has an anode of a first conductivity type and a cathode of a second conductivity type disposed below the anode. At least one of the cathode and anode have multiple, vertically abutting diffusion regions. The cathode and anode are disposed between and bounded by adjacent isolation regions.
公开/授权文献
- US07384854B2 Method of forming low capacitance ESD robust diodes 公开/授权日：2008-06-10
信息查询
