Invention Application
- Patent Title: Deposition method of dielecrtric films having a low dielectric constant
- Patent Title (中): 具有低介电常数的薄膜的沉积方法
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Application No.: US10379490Application Date: 2003-03-04
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Publication No.: US20030171004A1Publication Date: 2003-09-11
- Inventor: Michele Vulpio
- Applicant: STMicroelectronics S.r.I.
- Applicant Address: null
- Assignee: STMicroelectronics S.r.I.
- Current Assignee: STMicroelectronics S.r.I.
- Current Assignee Address: null
- Priority: EP00830319.0 20000428
- Main IPC: H01L021/31
- IPC: H01L021/31 ; C23C016/00
Abstract:
A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.
Public/Granted literature
- US06656855B2 Deposition method of dielectric films having a low dielectric constant Public/Granted day:2003-12-02
Information query
