发明申请
- 专利标题: Light-emitting diode with enhanced brightness and method for fabricating the same
- 专利标题(中): 具有增强亮度的发光二极管及其制造方法
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申请号: US10095003申请日: 2002-03-12
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公开(公告)号: US20030173602A1公开(公告)日: 2003-09-18
- 发明人: Jung-Kuei Hsu , Hsueh-Chih Yu , Chia-Liang Hsu , Hung-Yuan Lu , Yen-Hu Chu , Chui-Chuan Chang , Kwang-Ru Wang , Chang-Da Tsai , San Bao Lin , Yung-Chiang Hwang , Ming-Der Lin
- 主分类号: H01L027/15
- IPC分类号: H01L027/15 ; H01L031/12 ; B44F001/10 ; H01L033/00 ; H01L021/00 ; H01L031/062 ; H01L031/113
摘要:
The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.
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