公开(公告)号：US20040262711A1

公开(公告)日：2004-12-30

申请号：US10900916

申请日：2004-07-28

发明人： Zilan Shen

IPC分类号： H01L029/00 ,  H01L023/58 ,  H01L031/12 ,  H01L027/15

CPC分类号： H01L27/3288 ,  Y10S257/904

摘要： An organic light emitting device display may include transverse row and column lines. In a passively driven OLED display, a fuse may be positioned between the OLED material and the row electrode. When a short occurs, the single pixel may be separated from the circuit by the fuse, avoiding the possibility that an entire row of pixels may be adversely affected by the short associated with one single pixel along a row.

公开(公告)号：US20040227140A1

公开(公告)日：2004-11-18

申请号：US10758136

申请日：2004-01-16

申请人： Samsung Electronics Co, Ltd.

发明人： Eun-Kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L021/00 ,  H01L031/12 ,  H01L027/15 ,  H01L033/00

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

摘要翻译： 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。 该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在 具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。 硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。 此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

公开(公告)号：US20040217363A1

公开(公告)日：2004-11-04

申请号：US10841566

申请日：2004-05-10

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Yasufumi Shirakawa ,  Masaki Taniguchi ,  Hideo Fukuda ,  Yuzo Shimizu ,  Shinya Esaki

IPC分类号： H01L027/15 ,  H01L031/12 ,  H01L033/00 ,  H01L021/00 ,  H01L023/02

CPC分类号： H01L31/0203 ,  G11B7/13 ,  H01L25/167 ,  H01L31/02325 ,  H01L2224/16 ,  H01L2224/48227 ,  H01L2924/3025 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. A lead-mounted substrate is placed on the side of the light receiving surface of the integrated circuit device having a photo detecting part. The lead is electrically connected with the integrated circuit device via an electrode. The integrated circuit device and the substrate are encapsulated with an encapsulation section. The substrate has an opening at a position above the photo detecting part.

摘要翻译： 提供了适用于接收短波长激光的集成电路器件的封装结构。 引线安装基板被放置在具有光检测部分的集成电路装置的光接收表面的一侧。 引线通过电极与集成电路器件电连接。 集成电路器件和衬底用封装部分封装。 基板在光检测部分上方的位置具有开口。

公开(公告)号：US20040173805A1

公开(公告)日：2004-09-09

申请号：US10603659

申请日：2003-06-26

发明人： Mu-Jen Lai ,  Chia-Cheng Liu ,  Chiung-Yu Chang

IPC分类号： H01L027/15 ,  H01L031/12

CPC分类号： H01L33/08 ,  H01L33/32

摘要： The present invention discloses a light emitting diode (LED) by using a P-type ZnTe layer or a ZnSe layer as a substrate. To match the lattice between the substrate and blue light LED of cubic crystal, a BP(boron phosphide) buffer layer of single crystal is formed on the substrate. When the blue light LED emits blue light of wavelength from 450 nm to 470 nm, the ZnTe or ZnSe substrate absorbs the blue light and emits yellow-green light of wavelength 550 nm. Thus, white light is produced by mixing the blue light and the yellow-green light.

摘要翻译： 本发明公开了通过使用P型ZnTe层或ZnSe层作为基板的发光二极管（LED）。 为了匹配立方晶的衬底和蓝光LED之间的晶格，在衬底上形成单晶的BP（磷化硼）缓冲层。 当蓝光LED发射波长为450nm至470nm的蓝色光时，ZnTe或ZnSe衬底吸收蓝色光并发出波长为550nm的黄绿色光。 因此，通过混合蓝光和黄绿光产生白光。

公开(公告)号：US20040135154A1

公开(公告)日：2004-07-15

申请号：US10342995

申请日：2003-01-15

发明人： Daniel Darcy Doxsee ,  Cherian Jacob

IPC分类号： H01L027/15 ,  H01L031/12 ,  H01L033/00

CPC分类号： H01L33/504 ,  C09K11/7734 ,  C09K11/7739 ,  C09K11/7774 ,  H01L33/502 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  Y02B20/181 ,  H01L2924/00012

摘要： A light source including a specific LED and phosphor combination capable of emitting white light for direct illumination. In one embodiment, the light source includes an LED chip emitting in the 380-420 nm range radiationally coupled to a phosphor blend first phosphor selected from the group consisting of (Sr,Ba,Ca,Mg)5(PO4)3Cl:Eu2null (SECA) and BaMg2Al16O27:Eu2null with a second phosphor having the formula (Tb1-x-yAxREy)3DzO12 (TAG), where A is a member selected from the group consisting of Y, La, Gd, and Sm; RE is a member selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Lu; D is a member selected from the group consisting of Al, Ga, and In; x is in the range from 0 to about 0.5, y is in the range from about 0 to about 0.2, and z is in the range from about 4 to about 5. The light source thus produced will provide a high quality white light.

摘要翻译： 一种光源，包括能够发出白光直接照明的特定LED和荧光体组合。 在一个实施例中，光源包括发射在380-420nm范围内的LED芯片，其辐射耦合到选自由（Sr，Ba，Ca，Mg）5（PO 4）3 Cl：Eu 具有式（Tb1-x-yAxREy）3DzO12（TAG）的第二种磷光体，其中A是选自Y，La，Gd， 和Sm; RE为选自Ce，Pr，Nd，Sm，Eu，Gd，Dy，Ho，Er，Tm，Yb和Lu的成员; D是选自Al，Ga和In的成员; x在0至约0.5的范围内，y在约0至约0.2的范围内，并且z在约4至约5的范围内。由此产生的光源将提供高质量的白光。

公开(公告)号：US20040121500A1

公开(公告)日：2004-06-24

申请号：US10729090

申请日：2003-12-05

申请人： TriQuint Technology Holding Co.

发明人： Leonard Jan-Peter Ketelsen ,  Abdallah Ougazzaden ,  Junstin L. Peticolas

IPC分类号： H01L021/00 ,  H01L031/12 ,  H01L029/06

CPC分类号： H01L31/0203 ,  H01S5/2227 ,  H01S5/2275

摘要： The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been formed from a substrate. The end of the first layer may be isolated from the cladding layer by encapsulating the end between second and third layers located adjacent the mesa structure.

摘要翻译： 本发明提供一种光学装置及其制造方法。 在一个实施例中，制造光学器件的方法可以包括将第一层的端部与位于由衬底形成的台面结构之上的覆层进行隔离。 第一层的端部可以通过将端部封装在位于台面结构附近的第二层和第三层之间而与包层隔离。

公开(公告)号：US20040119085A1

公开(公告)日：2004-06-24

申请号：US10669227

申请日：2003-09-24

申请人： Osram Opto Semiconductor GmbH

发明人： Stefan Bader ,  Michael Fehrer ,  Wilhelm Stein ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

IPC分类号： H01L033/00 ,  H01L027/15 ,  H01L031/12

CPC分类号： H01L33/387 ,  H01L33/405 ,  H01L33/46

摘要： A radiation-emitting semiconductor component having a semiconductor body (1), which has an active zone (2), in which, for the purpose of electrical contact connection, a patterned contact layer (3) is applied on a surface of the semiconductor body. Interspaces (4) are distributed over the contact layer (3) and are provided for the purpose of forming free areas (5) on the surface which are not covered by the contact layer (3). The free areas (5) are covered with a mirror (6). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.

摘要翻译： 具有半导体本体（1）的辐射发射半导体部件具有活动区域（2），其中为了电接触连接，将图案化接触层（3）施加在半导体本体的表面上 。 间隙（4）分布在接触层（3）上，并且被提供用于在表面上形成未被接触层（3）覆盖的自由区域（5）。 自由区域（5）用镜子（6）覆盖。 接触连接和反射的两个功能的分离使得可以实现特别高的部件性能。

公开(公告)号：US20040094770A1

公开(公告)日：2004-05-20

申请号：US10705895

申请日：2003-11-13

发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Ichimatsu Abiko ,  Masaaki Sakuta

IPC分类号： H01L027/15 ,  H01L031/12 ,  H01L033/00

CPC分类号： B41J2/451 ,  B41J2/45 ,  H01L27/153 ,  H01L33/0079 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device such as a light-emitting device in the first thin semiconductor film to an integrated circuit in the second thin semiconductor film. Typically, the integrated circuit drives the semiconductor device. The two thin semiconductor films are formed separately from the substrate. The first thin semiconductor film may include an array of semiconductor devices. The first and second thin semiconductor films may be replicated as arrays bonded to the same substrate. Compared with conventional semiconductor apparatus comprising an array chip and a separate driver chip, the invented apparatus is smaller and has a reduced material cost.

摘要翻译： 半导体装置包括两个结合到基板的薄的半导体膜，以及将第一薄膜半导体膜中的诸如发光器件的半导体器件电连接到第二薄半导体膜中的集成电路的薄膜互连线。 通常，集成电路驱动半导体器件。 两个薄的半导体膜与衬底分开形成。 第一薄膜半导体膜可以包括半导体器件阵列。 第一和第二薄的半导体膜可以被复制为与同一衬底结合的阵列。 与包括阵列芯片和单独的驱动器芯片的常规半导体装置相比，本发明的装置更小并且材料成本降低。

公开(公告)号：US20040089868A1

公开(公告)日：2004-05-13

申请号：US10700536

申请日：2003-11-05

发明人： Schang-Jing Hon ,  Jenn-Bin Huang ,  Nai-Guann Yih

IPC分类号： H01L021/00 ,  H01L027/15 ,  H01L031/12 ,  H01L033/00

CPC分类号： H01L33/42 ,  H01L33/22 ,  H01L33/32

摘要： Disclosed are a GaN based compound semiconductor light emitting diode (LED) and a manufacturing method therefor. In the LED, a combination of a light extraction layer and an adaptive layeris formed over a multi-layer epitaxial stnmcture,wherein the light extraction layer is a light transmissible impurity doped metal oxide and the adaptive layer is a Ni/Au layer used to enhance ohmic contact between the light extraction layer and the multi-layer epitaxial structure.

摘要翻译： 公开了一种GaN基化合物半导体发光二极管（LED）及其制造方法。 在LED中，在多层外延结构上形成光提取层和自适应层的组合，其中光提取层是透光的杂质掺杂金属氧化物，并且自适应层是用于增强的Ni / Au层 光提取层与多层外延结构之间的欧姆接触。

公开(公告)号：US20040079952A1

公开(公告)日：2004-04-29

申请号：US10684936

申请日：2003-10-14

申请人： Semiconductor Energy Laboratory

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L027/15 ,  H01L031/12 ,  H01L033/00

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

摘要翻译： 在包括第一绝缘层，结晶半导体层和第二绝缘层的层叠体的半导体器件中，通过从应力平衡的角度来确定其结构，改善了器件的特性。 在包括在基板上具有拉伸应力的结晶半导体层的有源层的半导体器件中，对形成为与基板侧的半导体层的表面紧密接触的第一绝缘层施加拉伸应力，压缩应力 被赋予形成为与衬底侧相反的一侧与半导体层的表面紧密接触的第二绝缘层。