Invention Application
- Patent Title: Electron amplifier utilizing carbon nanotubes and method of manufacturing the same
- Patent Title (中): 使用碳纳米管的电子放大器及其制造方法
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Application No.: US10368466Application Date: 2003-02-20
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Publication No.: US20030173884A1Publication Date: 2003-09-18
- Inventor: Jung-na Heo , Whi-kun Yi , Jeong-hee Lee , Se-gi Yu , Tae-won Jeong , Chang-soo Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Kyungki-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Kyungki-do
- Priority: KR2002-9088 20020220
- Main IPC: H01J043/00
- IPC: H01J043/00

Abstract:
An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.
Public/Granted literature
- US06870308B2 Electron amplifier utilizing carbon nanotubes and method of manufacturing the same Public/Granted day:2005-03-22
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