公开(公告)号：US20030173884A1

公开(公告)日：2003-09-18

申请号：US10368466

申请日：2003-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-na Heo ,  Whi-kun Yi ,  Jeong-hee Lee ,  Se-gi Yu ,  Tae-won Jeong ,  Chang-soo Lee

IPC: H01J043/00

CPC classification number: B82Y10/00 ,  H01J43/243 ,  H01J43/246 ,  H01J2201/30469 ,  Y10S977/932 ,  Y10S977/939

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract translation: 提供电子放大器及其制造方法。 电子放大器包括其中形成有多个通孔的基板，沉积在通孔的侧壁上的电阻层，包括沉积在电阻层上的碳纳米管的电子发射层和形成在每个上的电极层 的基板的上侧和下侧。 由于电子放大器的电子发射层是均匀的并且提供高的电子发射效率，所以提高了电子放大效率。 电子放大器制造方法能够经济地批量生产电子放大器。