Invention Application
- Patent Title: Sputtered spring films with low stress anisotropy
- Patent Title (中): 具有低应力各向异性的溅射弹簧膜
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Application No.: US10121644Application Date: 2002-04-12
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Publication No.: US20030192476A1Publication Date: 2003-10-16
- Inventor: David K. Fork , Scott Solberg , Karl Littau
- Applicant: Xerox Corporation
- Applicant Address: null
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: null
- Main IPC: C23C014/32
- IPC: C23C014/32 ; C23C016/00 ; C23F001/00 ; B44C001/22

Abstract:
Methods are disclosed for fabricating spring structures that minimize helical twisting by reducing or eliminating stress anisotropy in the thin films from which the springs are formed through manipulation of the fabrication process parameters and/or spring material compositions. In one embodiment, isotropic internal stress is achieved by manipulating the fabrication parameters (i.e., temperature, pressure, and electrical bias) during spring material film formation to generate the tensile or compressive stress at the saturation point of the spring material. Methods are also disclosed for tuning the saturation point through the use of high temperature or the incorporation of softening metals. In other embodiments, isotropic internal stress is generated through randomized deposition (e.g., pressure homogenization) or directed deposition techniques (e.g., biased sputtering, pulse sputtering, or long throw sputtering). Cluster tools are used to separate the deposition of release and spring materials.
Public/Granted literature
- US06866255B2 Sputtered spring films with low stress anisotropy Public/Granted day:2005-03-15
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