Invention Application
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10422773Application Date: 2003-04-25
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Publication No.: US20030193627A1Publication Date: 2003-10-16
- Inventor: Yoshiharu Hirakata , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP09-123001 19970425
- Main IPC: G02F001/136
- IPC: G02F001/136

Abstract:
To provide an active matrix type liquid crystal display device having fine display performance, an interlayer insulating film 104 covering TFTs 102, 103 formed on a substrate 101 is first flattened by mechanical polishing typified by a CMP. Then pixel electrodes 106, 107 are formed thereon, and further, an insulating layer 108 covering the pixel electrodes is formed. And then, the insulating layer 108 is flattened by second mechanical polishing so that the surfaces of the pixel electrodes and the surface of the insulating layers 112, 113 form the same plane. By this, a difference in level disappears, and it is possible to prevent lowering of contrast or the like due to poor orientation of a liquid crystal material, diffused reflection of light, and the like.
Public/Granted literature
- US07006177B2 Semiconductor device and method of manufacturing the same Public/Granted day:2006-02-28
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