公开(公告)号：US20040253896A1

公开(公告)日：2004-12-16

申请号：US10769821

申请日：2004-02-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki

IPC: H01J009/00 ,  H01J009/24

CPC classification number: H01L21/76838 ,  G02F2001/136295 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76802 ,  H01L27/1292 ,  H01L29/66765 ,  H01L29/78669 ,  H01L51/0017 ,  H01L51/0019 ,  H01L51/0022 ,  H01L51/0023

Abstract: The present invention proposes a manufacturing method of a display device that accomplishes a lower production cost of a display device by using means for partially forming a resist film and means for partially forming a film and etching or ashing by plasma treatment at or near the atmospheric pressure. The manufacturing method of the display device according to the invention is characterized by including a step of partially forming a conductor film at or near the atmospheric pressure and forming wirings. Here, the wirings include all kinds of wirings such as connection wirings for sending signals from external input terminals to a pixel portion, wirings for connecting thin film transistors (TFT) to pixel electrodes, and so forth, besides wirings operating as gate wirings and source wirings at the pixel portion of an active matrix type display device.

Abstract translation: 本发明提出了一种显示装置的制造方法，其通过使用部分地形成抗蚀剂膜的装置来实现显示装置的较低生产成本，以及用于部分地形成膜的装置以及在大气压力附近等离子体处理的蚀刻或灰化 。 根据本发明的显示装置的制造方法的特征在于包括在大气压力或接近大气压下部分地形成导体膜并形成布线的步骤。 这里，布线包括各种布线，例如用于从外部输入端子发送信号到像素部分的连接布线，用于将薄膜晶体管（TFT）连接到像素电极的布线等等，除了用作栅极布线和源极的布线 有源矩阵型显示装置的像素部分处的布线。

公开(公告)号：US20040248388A1

公开(公告)日：2004-12-09

申请号：US10744138

申请日：2003-12-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Koji Dairiki

IPC: C30B001/00 ,  G02B027/00 ,  H01L021/36 ,  H01L021/20 ,  H01S003/13

CPC classification number: G02B26/02 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K2101/40 ,  G02B7/008 ,  H01L27/1285

Abstract: When the laser light is irradiated with high output in the manufacturing process for a semiconductor device, an attenuator is heated and cause a deformation due to the laser light scattered in the attenuator. As a result, the attenuation ratio of the attenuator fluctuates, and it is difficult to process the substrate with the homogeneous irradiation energy. It is a problem of the present invention to provide a laser irradiation apparatus, a method of irradiating laser light and a method of manufacturing a semiconductor device, which can perform the laser irradiation effectively and homogeneously. In the present invention, the thermal energy generated in an attenuator is absorbed by means of cooling in order to keep the temperature of the attenuator constant. By cooling the attenuator so as to prevent the change of the attenuation ratio, the function of the attenuator is protected. In addition, the energy fluctuation of the laser light irradiated on the substrate is also prevented. The attenuator includes an attenuator which separates a damper portion physically and cools the damper (refer to FIG. 4), and also includes an attenuator which cools the whole attenuator (refer to FIG. 7).

Abstract translation: 当在半导体器件的制造工艺中激光以高输出照射时，衰减器被加热并且由于在衰减器中散射的激光引起变形。 结果，衰减器的衰减比波动，并且难以以均匀的照射能量处理衬底。 本发明的目的是提供一种能够有效且均匀地进行激光照射的激光照射装置，照射激光的方法和半导体装置的制造方法。 在本发明中，通过冷却来吸收在衰减器中产生的热能，以使衰减器的温度保持恒定。 通过冷却衰减器以防止衰减比的变化，衰减器的功能得到保护。 此外，还防止了照射在基板上的激光的能量波动。 衰减器包括衰减器，其将物理上的阻尼器部分分隔开并使风门冷却（参见图4），并且还包括冷却整个衰减器的衰减器（参见图7）。

公开(公告)号：US20040241967A1

公开(公告)日：2004-12-02

申请号：US10882634

申请日：2004-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tamae Takano ,  Koji Dairiki

IPC: C30B001/00 ,  H01L021/76 ,  H01L021/20 ,  H01L021/36

CPC classification number: H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/3221 ,  H01L21/3226 ,  H01L21/67115 ,  H01L27/1277 ,  H01L27/1285

Abstract: In a manufacturing process of a semiconductor device using a substrate having low heat resistance, such as a glass substrate, there is provided a method of efficiently carrying out crystallization of a semiconductor film and gettering treatment of a catalytic element used for the crystallization by a heating treatment in a short time without deforming the substrate. A heating treatment method of the present invention is characterized in that a light source is controlled in a pulsed manner to irradiate a semiconductor film, so that a heating treatment of the semiconductor film is efficiently carried out in a short time, and damage of the substrate due to heat is prevented.

Abstract translation: 在使用玻璃基板等低耐热性的基板的半导体装置的制造方法中，提供了有效地进行半导体膜的结晶化的方法，并且通过加热对用于结晶的催化剂元素进行吸气处理 在短时间内处理而不使基材变形。 本发明的加热处理方法的特征在于，以脉冲方式控制光源照射半导体膜，使得半导体膜的加热处理在短时间内有效地进行，并且基板的损坏 由于防止了热量。

公开(公告)号：US20040239827A1

公开(公告)日：2004-12-02

申请号：US10752574

申请日：2004-01-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC: G02F001/136

CPC classification number: H01L27/1218 ,  H01L21/02175 ,  H01L21/28008 ,  H01L21/324 ,  H01L21/425 ,  H01L21/707 ,  H01L21/823487 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L29/78603 ,  H01L33/005 ,  H01L33/0054 ,  H01L51/003 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2933/0016

Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

Abstract translation: 本发明提供了一种剥离方法的简化方法以及均匀地剥离和转录到大尺寸基板。 本发明的一个特征是剥离第一粘合剂并在剥离过程中同时固化第二粘合剂，从而简化制造过程。 另外，本发明是为了将形成半导体的电极的剥离层转印为规定的基板的时机。 特别地，特征在于，在大尺寸基板上形成有多个半导体元件的状态下进行剥离的情况下，通过使用压差来进行剥离。

公开(公告)号：US20040224486A1

公开(公告)日：2004-11-11

申请号：US10190755

申请日：2002-07-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mitsuhiro Ichijo ,  Taketomi Asami ,  Noriyoshi Suzuki ,  Shunpei Yamazaki

IPC: H01L021/20

CPC classification number: H01L21/0237 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02675 ,  H01L27/1277 ,  H01L29/66757

Abstract: There is provided a technique for effectively removing a metallic element for promoting crystallization in a semiconductor film with a crystalline structure after the semiconductor film is obtained using the metallic element, to reduce a variation between elements. In a step of forming a gettering site, a plasma CVD method is used and a film formation is conducted using raw gas including monosilane, noble gas, and nitrogen to obtain a semiconductor film which includes the noble gas element at a high concentration, specifically, a concentration of 1null1020/cm3 to 1null1021/cm3 and has an amorphous structure, typically, an amorphous silicon film.

Abstract translation: 提供一种技术，用于在使用金属元件获得半导体膜之后，有效地去除在具有晶体结构的半导体膜中促进结晶的金属元素，以减少元件之间的变化。 在形成吸气部位的工序中，使用等离子体CVD法，使用含有甲硅烷，惰性气体和氮气的原料气进行成膜，得到高浓度的惰性气体元素的半导体膜， 浓度为1×10 20 / cm 3至1×10 21 / cm 3，并且具有非晶结构，通常为非晶硅膜。

公开(公告)号：US20040222467A1

公开(公告)日：2004-11-11

申请号：US10871621

申请日：2004-06-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai ,  Jun Koyama

IPC: H01L029/04

CPC classification number: H01L29/78621 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13394 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/13624 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13396 ,  G02F2001/13398 ,  G02F2001/136245 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1274 ,  H01L27/1288 ,  H01L29/167 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/7833 ,  H01L29/78672 ,  H01L29/78675 ,  Y10S438/919

Abstract: A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.

Abstract translation: 驱动电路的p沟道TFT具有单个漏极结构及其n沟道TFT，LDD结构。 像素TFT具有LDD结构。 设置在像素单元中的像素电极通过在至少由无机绝缘材料形成的保护绝缘膜中钻孔并形成在像素TFT的栅电极之上的孔连接到像素TFT，并且在层间绝缘膜 设置在与其紧密接触的绝缘膜上。 这些处理步骤使用6到8张照片掩模。

公开(公告)号：US20040222424A1

公开(公告)日：2004-11-11

申请号：US10866766

申请日：2004-06-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Keisuke Hayashi

IPC: H01L029/04

CPC classification number: H01L27/115 ,  G11C16/0433 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11541 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1233 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/7881

Abstract: Memory elements, switching elements, and peripheral circuits to constitute a nonvolatile memory are integrally formed on a substrate by using TFTs. Since semiconductor active layers of memory element TFTs are thinner than those of other TFTs, impact ionization easily occurs in channel regions of the memory element TFTs. This enables low-voltage write/erase operations to be performed on the memory elements, and hence the memory elements are less prone to deteriorate. Therefore, a nonvolatile memory capable of miniaturization can be provided.

公开(公告)号：US20040192025A1

公开(公告)日：2004-09-30

申请号：US10819964

申请日：2004-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd., a Japan corporation

Inventor： Shunpei Yamazaki ,  Takeshi Fukunaga

IPC: H01L021/76 ,  B05D005/12 ,  H01L021/4763

CPC classification number: H01L23/5222 ,  H01J2217/49 ,  H01L23/5226 ,  H01L23/5329 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device having reliable electrode contacts. First, an interlayer dielectric film is formed from a resinous material. Then, window holes are formed. The interlayer dielectric film is recessed by oxygen plasma. This gives rise to tapering window holes. This makes it easy to make contacts even if the circuit pattern is complex.

Abstract translation: 具有可靠电极接触的半导体器件。 首先，由树脂材料形成层间电介质膜。 然后，形成窗孔。 层间绝缘膜由氧等离子体凹陷。 这产生了锥形窗孔。 这使得即使电路图形复杂也可以容易地进行接触。

公开(公告)号：US20040169624A1

公开(公告)日：2004-09-02

申请号：US10786813

申请日：2004-02-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiromichi Godo ,  Junichiro Sakata ,  Kaoru Tsuchiya

IPC: G09G003/30 ,  H01J001/62 ,  H01J063/04

CPC classification number: H01L27/322 ,  H01L27/3211 ,  H01L51/5262 ,  H01L2251/5323 ,  H01L2251/558

Abstract: When materials of a cathode and an anode are transparent and a substrate with transparency is used for a substrate and a sealing substrate, luminescence from a layer including an organic compound can simultaneously perform two ways of display: luminescence passing a cathode and luminescence transmitted in an anode. However, interference effect by an optical distance difference results in difference in optical characteristics (such as a color tone) between luminescence from a top surface and luminescence from a bottom surface. According to the present invention, a light-emitting device having luminescence from a top surface and luminescence from a bottom surface provides both luminescence to a top surface and luminescence to a bottom surface with an image display having an uniform color tone and of high quality by regulating a film thickness of a transparent conductive film disposed on a cathode side and a film thickness of a cathode.

Abstract translation: 当阴极和阳极的材料是透明的并且具有透明度的基板用于基板和密封基板时，来自包括有机化合物的层的发光可以同时进行两种显示方式：通过阴极的发光和在 阳极。 然而，由于光距离的干涉效应导致来自顶面的发光与来自底面的发光之间的光学特性（例如色调）的差异。 根据本发明，具有来自顶表面的发光和来自底表面的发光的发光器件通过具有均匀色调的图像显示器和高质量的图像显示器向顶面提供发光和发光，并且通过 调节设置在阴极侧的透明导电膜的膜厚度和阴极的膜厚度。

公开(公告)号：US20040147066A1

公开(公告)日：2004-07-29

申请号：US10757193

申请日：2004-01-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe

IPC: H01L021/84

CPC classification number: H01L27/1288 ,  G03F7/0007 ,  G03F7/16 ,  H01L27/1214

Abstract: To provide a method for manufacturing a resist pattern designed to reduce a manufacturing cost by improving efficiency in the use of a resist material, a method for removing a resist pattern, and a method for manufacturing a semiconductor device. The present invention includes a step of forming a resist pattern by discharging a composition containing photosensitizer on a object to be processed under reduced pressure. The present invention includes a step of etching the object to be processed using the resist pattern as a mask, a step of irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of a photosensitizer, and a step of removing the resist pattern on the object to be processed.

Abstract translation: 提供通过提高抗蚀剂材料的使用效率来降低制造成本的抗蚀剂图案的制造方法，抗蚀剂图案的除去方法以及半导体装置的制造方法。 本发明包括通过在减压下将含有光敏剂的组合物排放在待处理物体上而形成抗蚀剂图案的步骤。 本发明包括使用抗蚀剂图案作为掩模蚀刻待处理对象的步骤，通过光掩模将抗蚀剂图案用光照射在光敏剂的光敏波长区域内的步骤，以及去除抗蚀剂图案的步骤 对待处理的物体。