Invention Application
- Patent Title: High voltage mos-gated power device and related manufacturing process
- Patent Title (中): 高电压电力装置及相关制造工艺
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Application No.: US10430771Application Date: 2003-05-06
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Publication No.: US20030201503A1Publication Date: 2003-10-30
- Inventor: Ferruccio Frisina
- Applicant: STMicroelectronics, S.r.I.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics, S.r.I.
- Current Assignee: STMicroelectronics, S.r.I.
- Current Assignee Address: IT Agrate Brianza
- Priority: EP98830737.7 19981209
- Main IPC: H01L029/76
- IPC: H01L029/76
Abstract:
MOS-gated power device including a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type. A plurality of doped regions of a first conductivity type is formed in the semiconductor material layer, each one of the doped regions being disposed under a respective body region and being separated from other doped regions by portions of the semiconductor material layer.
Public/Granted literature
- US07084034B2 High voltage MOS-gated power device and related manufacturing process Public/Granted day:2006-08-01
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