The self-repair method for a nonvolatile memory intervenes at the end of an operation of modification, selected between programming and erasing, in the event of detection of just one non-functioning cell, and carries out redundancy of the non-functioning cell. To this end, the memory array is divided into a basic portion, formed by a plurality of memory cells storing basic data, and into a in-the-field redundancy portion, said in-the-field redundancy portion being designed to store redundancy data including a correct content of the non-functioning cell, the address of the non-functioning cell, and an activated redundancy flag. The redundancy is activated only after applying a preset maximum number of modification pulses and uses a purposely designed redundancy replacement circuit and a purposely designed redundancy data verification circuit.