公开(公告)号：US20030235092A1

公开(公告)日：2003-12-25

申请号：US10423845

申请日：2003-04-24

Applicant: STMicroelectronics S.r.l.

Inventor： Rino Micheloni ,  Aldo Losavio

IPC: G11C007/00

CPC classification number: G11C29/808

Abstract: The self-repair method for a nonvolatile memory intervenes at the end of an operation of modification, selected between programming and erasing, in the event of detection of just one non-functioning cell, and carries out redundancy of the non-functioning cell. To this end, the memory array is divided into a basic portion, formed by a plurality of memory cells storing basic data, and into a in-the-field redundancy portion, said in-the-field redundancy portion being designed to store redundancy data including a correct content of the non-functioning cell, the address of the non-functioning cell, and an activated redundancy flag. The redundancy is activated only after applying a preset maximum number of modification pulses and uses a purposely designed redundancy replacement circuit and a purposely designed redundancy data verification circuit.

Abstract translation: 在检测到仅一个非功能单元的情况下，非易失性存储器的自修复方法在编程和擦除之间选择的修改操作结束时进行干预，并且执行非功能单元的冗余。 为此，存储器阵列被划分为由存储基本数据的多个存储单元形成的基本部分，并且进入现场冗余部分，所述现场冗余部分被设计为存储冗余数据 包括非正常单元的正确内容，非功能单元的地址和激活的冗余标志。 冗余仅在应用预设的最大数量的修改脉冲之后被激活，并且使用专门设计的冗余替换电路和专门设计的冗余数据验证电路。

公开(公告)号：US20030231532A1

公开(公告)日：2003-12-18

申请号：US10417416

申请日：2003-04-15

Applicant: STMicroelectronics S.r.l

Inventor： Rino Micheloni ,  Aldo Losavio

IPC: G11C029/00

CPC classification number: G06F11/1068

Abstract: The method for using a nonvolatile memory having a plurality of cells, each of which stores a datum, is based upon the steps of performing an modification operation of erasing/programming the data of the memory; verifying the correctness of the data of the memory cells; and, if the step of verifying has revealed at least one incorrect datum, correcting on-the-field the incorrect datum, using an error correcting code. The verification of the correctness of the data is performed by determining the number of memory cells storing an incorrect datum; if the number of memory cells storing the incorrect datum is less than or equal to a threshold, the erroneous datum is corrected by the error correction code; otherwise, new erasing/programming pulses are supplied.

Abstract translation: 使用具有存储数据的多个单元的非易失性存储器的方法基于执行擦除/编程存储器的数据的修改操作的步骤; 验证存储器单元的数据的正确性; 并且如果验证步骤已经显示出至少一个不正确的数据，则使用错误校正码对现场校正不正确的数据进行校正。 通过确定存储不正确数据的存储单元的数量来执行数据的正确性的验证; 如果存储不正确的数据的存储单元的数量小于或等于阈值，则错误校正码校正错误的数据; 否则，将提供新的擦除/编程脉冲。