Invention Application
- Patent Title: Method of manufacturing an emitter
- Patent Title (中): 制造发射体的方法
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Application No.: US10688731Application Date: 2003-10-15
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Publication No.: US20040087240A1Publication Date: 2004-05-06
- Inventor: Zhizhang Chen , Paul J. Benning , Sriram Ramamoorthi , Thomas Novet
- Main IPC: H01J009/04
- IPC: H01J009/04 ; H01J009/12

Abstract:
An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.
Public/Granted literature
- US07049158B2 Method of manufacturing an emitter Public/Granted day:2006-05-23
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