公开(公告)号：US20040266308A1

公开(公告)日：2004-12-30

申请号：US10730041

申请日：2003-12-09

Inventor： Kanwal K. Raina

IPC: B05D005/12 ,  H01J009/04 ,  H01J009/12

CPC classification number: H01J9/025

Abstract: A system and method for fabricating a FED device is disclosed. The system and method provide for use of PECVD hydrogenation followed by nitrogen plasma treatment of the tip of the current emitter of the FED device. The use of this process greatly reduces the native oxides in the tip of the current emitter. Such native oxides function as undesirable insulators degrading current emission. By reducing the amount of oxides in the tip, this invention provides for an increase in the current emission of the FED device.

Abstract translation: 公开了一种用于制造FED装置的系统和方法。 该系统和方法提供使用PECVD氢化，然后对FED装置的电流发射器的尖端进行氮等离子体处理。 该方法的使用大大降低了电流发射极尖端的天然氧化物。 这种天然氧化物起到降低电流发射的不期望的绝缘体的作用。 通过减少尖端中的氧化物的量，本发明提供了FED装置的电流发射的增加。

公开(公告)号：US20040192150A1

公开(公告)日：2004-09-30

申请号：US10699773

申请日：2003-11-04

Inventor： Keizou Makino ,  Takeshi Tsukasaki

IPC: H01J009/12

CPC classification number: H01J29/073 ,  H01J9/142 ,  H01J2229/0716

Abstract: H-members (11) each have an approximately triangular shape in cross section, and are controlled to be small in thickness especially for weight reduction. A position for applying a pressure by a pressure member (23) is determined in such a way that a contact surface (27) of the pressure member (23), which comes into contact with the H-members (11), covers a joint (S1) between two sides of each of the H-members (11) having an approximately triangular shape in cross section. The pressure member (23) applies a pressure through surface-to-surface contact, and thereafter, grille strips (12) are cooperatively fixed to the H-members (11). As a result, a tension distribution causing no degradation of a display oscillation property is obtained. Further, application of a pressure by the pressure member (23) causes no partial deformation of the H-members (11), whereby generation of a wrinkle is prevented.

Abstract translation: H形部件（11）的截面为大致三角形状，特别是为了减轻重量而被控制得较小。 由压力构件（23）施加压力的位置被确定为与H构件（11）接触的压力构件（23）的接触表面（27）覆盖接头 （11）的两侧之间的横截面为大致三角形形状（S1）。 压力构件（23）通过表面 - 表面接触施加压力，此后格栅条（12）协同地固定到H构件（11）上。 结果，获得不会导致显示振荡特性降低的张力分布。 此外，通过加压构件（23）施加压力不会导致H构件（11）的部分变形，从而防止产生褶皱。

公开(公告)号：US20040023592A1

公开(公告)日：2004-02-05

申请号：US10615548

申请日：2003-07-08

Inventor： Ammar Derraa

IPC: H01J009/04 ,  H01J009/12

CPC classification number: H01J9/025

Abstract: A method for fabricating a field emission structure is disclosed. A first dielectric layer and a second material layer are disposed over a substrate and at least one emitter tip thereon. Planarization of the second layer exposes regions of the first layer that cover the emitter tip, which regions may then be removed through the second layer. Substantially Substantial removal of the second layer reduces any conductive defects that protrude from a surface of the first layer. A third, dielectric layer and fourth, grid layer are then formed. Planarization of the fourth layer forms grid openings and exposes dielectric material of the third layer which overlies the emitter tip. Dielectric material of one or both underlying layers may then be removed to expose the outer surfaces of the emitter tip.

Abstract translation: 公开了一种用于制造场发射结构的方法。 第一介电层和第二材料层设置在衬底上并且其上具有至少一个发射极尖端。 第二层的平面化暴露了覆盖发射极尖端的第一层的区域，然后可以通过第二层去除哪些区域。 基本上大量地去除第二层减少从第一层的表面突出的任何导电缺陷。 然后形成第三个介电层和第四个栅格层。 第四层的平面化形成网格开口并暴露位于发射极尖端的第三层的介电材料。 然后可以去除一个或两个下层的介电材料以暴露发射极尖端的外表面。

公开(公告)号：US20020193040A1

公开(公告)日：2002-12-19

申请号：US09881684

申请日：2001-06-18

Inventor： Otto Z. Zhou

IPC: C01B021/082 ,  H01L021/00 ,  H01J009/04 ,  H01J009/12 ,  C25D005/54

CPC classification number: B82Y10/00 ,  C30B29/605 ,  C30B33/00 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/842

Abstract: A method of reducing electronic work function, reducing threshold field emission values, converting semiconducting behavior to metallic behavior, increasing the electron density state at the Fermi level, and increasing electron emission site density, of nanostructure or nanotube-containing material, the method including: forming openings in the nanotube-containing material; introducing a foreign species such as an alkali metal into at least some of the openings; and closing the openings, thereby forming capsules filled with the foreign species, and forming field emission cathode and flat panel displays using these capsules.

Abstract translation: 一种减少电子功函数，降低阈值场发射值，将半导体行为转换为金属行为，增加费米能级电子密度状态，增加纳米结构或含纳米管材料的电子发射位点密度的方法，该方法包括： 在含纳米管的材料中形成开口; 将诸如碱金属的外来物质引入到至少一些开口中; 并关闭开口，从而形成填充有异物的胶囊，并使用这些胶囊形成场发射阴极和平板显示器。

公开(公告)号：US20010000163A1

公开(公告)日：2001-04-05

申请号：US09727023

申请日：2000-11-29

Inventor： Xueping Xu ,  George R. Brandes ,  Christopher J. Spindt ,  Colin D. Stanners ,  John M. Macaulay

IPC: H01J009/04 ,  H01J009/12

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

Abstract translation: 适用于平板显示器的阴极结构设置有涂覆的发射器。 发射体由能够生长到高纵横比的材料（通常为镍）形成。 然后，这些发射体涂覆有含碳材料，以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺，其中将乙炔泵送通过DC等离子体反应器以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上，随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

公开(公告)号：US20040248495A1

公开(公告)日：2004-12-09

申请号：US10886248

申请日：2004-07-07

Inventor： Joseph Arthur Reed ,  Gary Lee Diven

IPC: H01J009/236 ,  H01J009/12

CPC classification number: H01J29/07 ,  H01J2229/0744

Abstract: The present invention provides a tension mask having a frequency distribution with improved vibration damping. The tension mask includes a center portion between two edge portions. The tension mask also has a parabolic frequency distribution between the edge portions whereby the center portion has a central frequency distribution value and the edge portions have a relatively lower peripheral frequency distribution value characterized in that the range of variation between the center and edge portions frequency distribution value is in the closed interval of about 8 Hznullnullnull12 Hz

Abstract translation: 本发明提供一种具有频率分布改善了振动阻尼的张力掩模。 张力罩包括在两个边缘部分之间的中心部分。 张力掩模在边缘部分之间也具有抛物线频率分布，由此中心部分具有中心频率分布值，并且边缘部分具有相对较低的外围频率分布值，其特征在于中心和边缘部分频率分布之间的变化范围 值在约8Hz <= Delta <= 12Hz的闭合间隔内

公开(公告)号：US20040231150A1

公开(公告)日：2004-11-25

申请号：US10451860

申请日：2003-06-25

Inventor： Harry K. Charles JR. ,  Arthur S Francomacaro ,  Allen C Keeney ,  David M Lee ,  Timothy J Cornish

IPC: H01J009/12 ,  H01F007/06

CPC classification number: H01J49/061 ,  H01J37/147 ,  H01J49/06 ,  H01J49/40 ,  H01J2237/151 ,  H04R17/00 ,  Y10T29/4902 ,  Y10T29/49117 ,  Y10T29/49155

Abstract: A gating grid for deflecting ions includes an insulating substrate (16), a conducting layer (28) adhered to the insulating substrate (16), and interdigitated electrodes (14) patterned in the conducting layer by a photolithographic process. A hole (18) in the insulating substrate beneath the interdigitated electrodes allows ions to pass through the hole in the substrate. A process for making a gating grid for deflecting ions includes adhering a conducting layer (28) to an insulating substrate (16), forming interdigitated electrodes (14) on the conducting layer (28), and then forming a hole (18) in the insulating substrate beneath the interdigitated electrodes.

Abstract translation: 用于偏转离子的选通栅格包括绝缘衬底（16），粘附到绝缘衬底（16）的导电层（28）和通过光刻工艺在导电层中图案化的交错电极（14）。 在交叉电极下方的绝缘基板中的孔（18）允许离子穿过衬底中的孔。 制造用于偏转离子的选通栅格的方法包括将导电层（28）粘附到绝缘基板（16）上，在导电层（28）上形成交错电极（14），然后在导电层（28）中形成孔（18） 绝缘衬底在交叉电极下面。

公开(公告)号：US20030122118A1

公开(公告)日：2003-07-03

申请号：US10145723

申请日：2002-05-16

Inventor： Chun-Tao Lee ,  Cheng-Chung Lee ,  Jyh-Rong Sheu ,  Yu-Yang Chang

IPC: H01L029/06 ,  H01J009/12 ,  G09G003/10

CPC classification number: G09G3/22 ,  H01J31/127 ,  H01J2203/0292 ,  H01J2329/4695

Abstract: An improved FED driving method, which uses a voltage control different from the prior FED, to turn an electron beam on/off and increase the resolution. The improved FED driving method is characterized in increasing a positive voltage applied to the FED's anode, grounding the FED's emitter and applying a negative voltage to the FED's gate. When driving the FED, the anode can pull electron beam out of the cathode with high accelerate voltage and the applied negative voltage on the gate can turn the electron beam on/off. As such, this allows a higher resolution because the electron beam is not influenced by the gate's lateral attraction and high lighting efficiency with high anode accelerate voltage.

Abstract translation: 使用与先前的FED不同的电压控制的改进的FED驱动方法来打开/关闭电子束并提高分辨率。 改进的FED驱动方法的特征在于增加施加到FED阳极的正电压，将FED的发射极接地并向FED的门施加负电压。 当驱动FED时，阳极可以以高加速电压将电子束拉出阴极，并且栅极上施加的负电压可以打开/关闭电子束。 因此，这允许更高的分辨率，因为电子束不受栅极的横向吸引和高阳极加速电压的高照明效率的影响。

公开(公告)号：US20020168915A1

公开(公告)日：2002-11-14

申请号：US10186552

申请日：2002-07-01

Inventor： Jason B. Elledge

IPC: H01J009/12

CPC classification number: H01J9/20 ,  H01J9/185 ,  H01J29/028 ,  H01J29/864 ,  H01J2329/8625 ,  H01J2329/863

Abstract: A process for fabricating a face plate for a flat panel display such as a field emission cathode type display is disclosed, the face plate having integral spacer support structures. Also disclosed is a product made by the aforesaid process.

Abstract translation: 公开了一种用于制造诸如场致发射阴极型显示器的平板显示器的面板的方法，该面板具有一体的间隔件支撑结构。 还公开了通过上述方法制造的产品。

公开(公告)号：US20020168913A1

公开(公告)日：2002-11-14

申请号：US10127555

申请日：2002-04-22

Inventor： Johannes Petrus Wilhelmus Baaijens ,  Franciscus Johannes Gerardus Hakkens ,  Ronald Antonie Hovenkamp

IPC: H01J009/12

CPC classification number: H01J9/146

Abstract: One of the process steps in the manufacturing process of shadow masks (13) for color display tubes (1) is blackening. In this process step, the shadow mask (13) is heated for example to a temperature of at least 600null C. in a furnace in a gentle oxidative atmosphere of a mixture of carbon monoxide and carbon dioxide. Under these conditions the shadow mask (13) is covered with a layer of Fe3O4, also referred to as nullblack rustnull. After this the shadow mask (13) is cooled down. The invention describes a new blackening process which has a much higher cooling rate than usual. In the present-day process, a cooling rate of 50null C./min (21) is used; this invention discloses a cooling rate of at least 500null C./min (22) or even more. This results in an improvement by at least 20% of the thermal expansion coefficient, leading to a color display tube (1) with a shadow mask (13) having a higher mechanical stability and hence to an increased picture performance.

Abstract translation: 用于彩色显像管（1）的荫罩（13）的制造过程中的一个工艺步骤是变黑。 在该工艺步骤中，将荫罩（13）在一氧化碳和二氧化碳的混合物的温和氧化气氛中在炉中加热至例如至少600℃的温度。 在这些条件下，荫罩（13）被Fe3O4层（也称为“黑锈”）覆盖，之后将荫罩（13）冷却下来，本发明描述了一种新的黑化工艺， 冷却速度比常规冷却速度快，在当前的冷却速度为50℃/分钟（21）的情况下，本发明公开了至少500℃/分钟（22）以上的冷却速度。 这导致热膨胀系数的至少20％的改善，导致具有较高机械稳定性的荫罩（13）的彩色显像管（1），从而提高了图像性能。