Invention Application
US20040101632A1 Method for curing low dielectric constant film by electron beam
审中-公开
用电子束固化低介电常数膜的方法
- Patent Title: Method for curing low dielectric constant film by electron beam
- Patent Title (中): 用电子束固化低介电常数膜的方法
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Application No.: US10302375Application Date: 2002-11-22
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Publication No.: US20040101632A1Publication Date: 2004-05-27
- Inventor: Wen H. Zhu , Tzu-Fang Huang , Lihua Li , Li-Qun Xia , Ellie Y. Yieh
- Applicant: Applied Materials, Inc.
- Applicant Address: null
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: null
- Main IPC: C23C016/00
- IPC: C23C016/00 ; B05D003/00
Abstract:
A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen in a chemical vapor deposition chamber. The method further includes exposing the low dielectric constant film to an electron beam having an exposure dose less than about 400 nullC/cm2 at conditions sufficient to increase the hardness of the low dielectric constant film.
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