Invention Application
US20040115343A1 Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks
审中-公开
用于制造多层衰减相移光掩模坯料的离子束沉积工艺
- Patent Title: Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks
- Patent Title (中): 用于制造多层衰减相移光掩模坯料的离子束沉积工艺
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Application No.: US10473698Application Date: 2003-09-29
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Publication No.: US20040115343A1Publication Date: 2004-06-17
- Inventor: Peter Francis Carcia , Laurent Dieu
- Main IPC: B05B005/00
- IPC: B05B005/00
Abstract:
A single ion-beam deposition, or a dual ion-beam deposition process for fabricating attenuating phase shift photomask blanks capable of producing a phase shift of 180null and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths
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