发明申请
US20040157170A1 Plasma ashing process for removing photoresist and residues during ferroelectric device fabrication
失效
用于在铁电体器件制造期间去除光致抗蚀剂和残留物的等离子体灰化过程
- 专利标题： Plasma ashing process for removing photoresist and residues during ferroelectric device fabrication
- 专利标题（中）： 用于在铁电体器件制造期间去除光致抗蚀剂和残留物的等离子体灰化过程
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申请号： US10248707申请日： 2003-02-11
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公开(公告)号： US20040157170A1公开(公告)日： 2004-08-12
- 发明人: Carlo Waldfried , Qingyuan Han , Orlando Escorcia , Ebrahim Andideh
- 主分类号： G03F007/42
- IPC分类号： G03F007/42
摘要：
A low temperature plasma ashing process for use with substrates comprising a ferroelectric material. The process generally includes plasma ashing the photoresist and residues at a temperature of about room temperature to about 140null C., wherein the plasma is generated from a gas mixture consisting essentially of hydrogen and an inert gas, and wherein the ferroelectric material is exposed to the plasma.
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